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Title: Optical devices featuring textured semiconductor layers

Abstract

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Inventors:
 [1];  [2]
  1. Dover, MA
  2. Cary, NC
Issue Date:
Research Org.:
National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1028989
Patent Number(s):
8035113
Application Number:
11/590,687
Assignee:
The Trustees of Boston University (Boston, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
FC26-04NT42275
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Moustakas, Theodore D, and Cabalu, Jasper S. Optical devices featuring textured semiconductor layers. United States: N. p., 2011. Web.
Moustakas, Theodore D, & Cabalu, Jasper S. Optical devices featuring textured semiconductor layers. United States.
Moustakas, Theodore D, and Cabalu, Jasper S. Tue . "Optical devices featuring textured semiconductor layers". United States. https://www.osti.gov/servlets/purl/1028989.
@article{osti_1028989,
title = {Optical devices featuring textured semiconductor layers},
author = {Moustakas, Theodore D and Cabalu, Jasper S},
abstractNote = {A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {10}
}

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Works referenced in this record:

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
journal, June 2001


Outlook for high efficiency solar cells to be used with and without concentration
journal, April 1995


30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
journal, October 1993


Molecular-Scale Mlcroporous Superlattices
journal, February 1987


InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
journal, December 2002


Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes
journal, January 2002