Single P-N junction tandem photovoltaic device

Walukiewicz, Wladyslaw; Yu, Kin Man

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Title: Single P-N junction tandem photovoltaic device

Abstract

A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Inventors:

Walukiewicz, Wladyslaw ^[1]; Ager, III, Joel W. ^[2]; Yu, Kin Man ^[3]

Kensington, CA
(Berkeley, CA)
Lafayette, CA

Issue Date:: Tue Oct 18 00:00:00 EDT 2011

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1028778

Patent Number(s):: 8039740

Application Number:: 11/777,963

Assignee:: RoseStreet Labs Energy, Inc. (Phoenix, AZ)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0725 - Multiple junction or tandem solar cells
H01L31/074 - comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:: AC02-05CH11231

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Walukiewicz, Wladyslaw, Ager, III, Joel W., and Yu, Kin Man. Single P-N junction tandem photovoltaic device.  United States: N. p., 2011. 
        Web.

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                    Walukiewicz, Wladyslaw, Ager, III, Joel W., & Yu, Kin Man. Single P-N junction tandem photovoltaic device.  United States.

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                    Walukiewicz, Wladyslaw, Ager, III, Joel W., and Yu, Kin Man. Tue .  
        "Single P-N junction tandem photovoltaic device".  United States.  https://www.osti.gov/servlets/purl/1028778.

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@article{osti_1028778,

  title        = {Single P-N junction tandem photovoltaic device},

  author       = {Walukiewicz, Wladyslaw and Ager, III, Joel W. and Yu, Kin Man},

  abstractNote = {A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Oct 18 00:00:00 EDT 2011},

  month        = {Tue Oct 18 00:00:00 EDT 2011}

}

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Works referenced in this record:

Structure and electronic properties of InN and In-rich group III-nitride alloys
journal, February 2006

Walukiewicz, W.; Ager, J. W.; Yu, K. M.
Journal of Physics D: Applied Physics, Vol. 39, Issue 5
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III–V compound multi-junction solar cells: present and future
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Yamaguchi, M.
Solar Energy Materials and Solar Cells, Vol. 75, Issue 1-2
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Band Anticrossing in GaInNAs Alloys
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Shan, W.; Walukiewicz, W.; Ager, J. W.
Physical Review Letters, Vol. 82, Issue 6
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29.5%‐efficient GaInP/GaAs tandem solar cells
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Bertness, K. A.; Kurtz, Sarah R.; Friedman, D. J.
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Unusual properties of the fundamental band gap of InN
journal, May 2002

Wu, J.; Walukiewicz, W.; Yu, K. M.
Applied Physics Letters, Vol. 80, Issue 21
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Peaked Schottky‐barrier solar cells by Al‐Si metallurgical reactions
journal, June 1977

Card, H. C.; Yang, E. S.; Panayotatos, P.
Applied Physics Letters, Vol. 30, Issue 12
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Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
journal, April 1996

Martin, G.; Botchkarev, A.; Rockett, A.
Applied Physics Letters, Vol. 68, Issue 18
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Characterization and analysis of InGaN photovoltaic devices
conference, January 2005

Jani, O.; Honsberg, C.; Asghar, A.
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.
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Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs
journal, July 2003

Yu, K. M.; Walukiewicz, W.; Scarpulla, M. A.
Journal of Applied Physics, Vol. 94, Issue 2
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Schottky‐barrier solar‐cell calculations
journal, February 1974

Pulfrey, D. L.; McOuat, R. F.
Applied Physics Letters, Vol. 24, Issue 4
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Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation
journal, July 1960

Wolf, M.
Proceedings of the IRE, Vol. 48, Issue 7, p. 1246-1263
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The role of the interfacial layer in Schottky barrier solar cells
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Swami, N. K.; Srivastava, S.; Ghule, H. M.
Journal of Physics D: Applied Physics, Vol. 12, Issue 5
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Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997

Luque, Antonio; Martí, Antonio
Physical Review Letters, Vol. 78, Issue 26
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Electrical characteristics of InAsSb/GaSb heterojunctions
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Applied Physics Letters, Vol. 49, Issue 1
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Growth of InN and InGaN on Si substrate for solar cell applications
conference, January 2004

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Fermi-level stabilization energy in group III nitrides
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Third-derivative modulation spectroscopy with low-field electroreflectance
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Projected performance of three- and four-junction devices using GaAs and GaInP
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Kurtz, S. R.; Myers, D.; Olson, J. M.
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Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers
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Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
journal, November 2003

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Similar Records

Title: Single P-N junction tandem photovoltaic device

Abstract

Citation Formats

Structure and electronic properties of InN and In-rich group III-nitride alloys journal, February 2006

III–V compound multi-junction solar cells: present and future journal, January 2003

Band Anticrossing in GaInNAs Alloys journal, February 1999

29.5%‐efficient GaInP/GaAs tandem solar cells journal, August 1994

Unusual properties of the fundamental band gap of InN journal, May 2002

Peaked Schottky‐barrier solar cells by Al‐Si metallurgical reactions journal, June 1977

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy journal, April 1996

Characterization and analysis of InGaN photovoltaic devices conference, January 2005

Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs journal, July 2003

Schottky‐barrier solar‐cell calculations journal, February 1974

Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation journal, July 1960

The role of the interfacial layer in Schottky barrier solar cells journal, May 1979

Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels journal, June 1997

Electrical characteristics of InAsSb/GaSb heterojunctions journal, July 1986

Growth of InN and InGaN on Si substrate for solar cell applications conference, January 2004

Fermi-level stabilization energy in group III nitrides journal, April 2005

Third-derivative modulation spectroscopy with low-field electroreflectance journal, June 1973

Projected performance of three- and four-junction devices using GaAs and GaInP conference, January 1997

Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers journal, June 2005

In 1− x Ga x As‐GaSb 1− y As y heterojunctions by molecular beam epitaxy journal, August 1977

Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system journal, November 2003

Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells conference, May 2006

n ‐indium tin oxide/ p ‐indium phosphide solar cells journal, June 1977

Small band gap bowing in In1−xGaxN alloys journal, June 2002

Structure and electronic properties of InN and In-rich group III-nitride alloys
journal, February 2006

III–V compound multi-junction solar cells: present and future
journal, January 2003

Band Anticrossing in GaInNAs Alloys
journal, February 1999

29.5%‐efficient GaInP/GaAs tandem solar cells
journal, August 1994

Unusual properties of the fundamental band gap of InN
journal, May 2002

Peaked Schottky‐barrier solar cells by Al‐Si metallurgical reactions
journal, June 1977

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
journal, April 1996

Characterization and analysis of InGaN photovoltaic devices
conference, January 2005

Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs
journal, July 2003

Schottky‐barrier solar‐cell calculations
journal, February 1974

Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation
journal, July 1960

The role of the interfacial layer in Schottky barrier solar cells
journal, May 1979

Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997

Electrical characteristics of InAsSb/GaSb heterojunctions
journal, July 1986

Growth of InN and InGaN on Si substrate for solar cell applications
conference, January 2004

Fermi-level stabilization energy in group III nitrides
journal, April 2005

Third-derivative modulation spectroscopy with low-field electroreflectance
journal, June 1973

Projected performance of three- and four-junction devices using GaAs and GaInP
conference, January 1997

Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers
journal, June 2005

In _{1− x} Ga _x As‐GaSb _{1− y} As _y heterojunctions by molecular beam epitaxy
journal, August 1977

Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
journal, November 2003

Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells
conference, May 2006

n ‐indium tin oxide/ p ‐indium phosphide solar cells
journal, June 1977

Small band gap bowing in In1−xGaxN alloys
journal, June 2002