Optical NOR gate
Abstract
An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1027454
- Patent Number(s):
- 8014639
- Application Number:
- 12/270,221
- Assignee:
- Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Skogen, Erik J, and Tauke-Pedretti, Anna. Optical NOR gate. United States: N. p., 2011.
Web.
Skogen, Erik J, & Tauke-Pedretti, Anna. Optical NOR gate. United States.
Skogen, Erik J, and Tauke-Pedretti, Anna. Tue .
"Optical NOR gate". United States. https://www.osti.gov/servlets/purl/1027454.
@article{osti_1027454,
title = {Optical NOR gate},
author = {Skogen, Erik J and Tauke-Pedretti, Anna},
abstractNote = {An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 06 00:00:00 EDT 2011},
month = {Tue Sep 06 00:00:00 EDT 2011}
}
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