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Title: Optical NOR gate

Abstract

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1027454
Patent Number(s):
8014639
Application Number:
12/270,221
Assignee:
Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Skogen, Erik J, and Tauke-Pedretti, Anna. Optical NOR gate. United States: N. p., 2011. Web.
Skogen, Erik J, & Tauke-Pedretti, Anna. Optical NOR gate. United States.
Skogen, Erik J, and Tauke-Pedretti, Anna. Tue . "Optical NOR gate". United States. https://www.osti.gov/servlets/purl/1027454.
@article{osti_1027454,
title = {Optical NOR gate},
author = {Skogen, Erik J and Tauke-Pedretti, Anna},
abstractNote = {An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {9}
}