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Title: Lateral conduction infrared photodetector

Abstract

A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1027204
Patent Number(s):
8022390
Application Number:
11/840,278
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Kim, Jin K, and Carroll, Malcolm S. Lateral conduction infrared photodetector. United States: N. p., 2011. Web.
Kim, Jin K, & Carroll, Malcolm S. Lateral conduction infrared photodetector. United States.
Kim, Jin K, and Carroll, Malcolm S. Tue . "Lateral conduction infrared photodetector". United States. https://www.osti.gov/servlets/purl/1027204.
@article{osti_1027204,
title = {Lateral conduction infrared photodetector},
author = {Kim, Jin K and Carroll, Malcolm S},
abstractNote = {A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {9}
}

Works referenced in this record:

InAs/(GaIn)Sb short-period superlattices for focal plane arrays
conference, May 2005


Type-II InAs/GaInSb superlattices for infrared detection: an overview
conference, May 2005


Competitive technologies of third generation infrared photon detectors
journal, January 2006