Lateral conduction infrared photodetector
Abstract
A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1027204
- Patent Number(s):
- 8022390
- Application Number:
- 11/840,278
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Kim, Jin K, and Carroll, Malcolm S. Lateral conduction infrared photodetector. United States: N. p., 2011.
Web.
Kim, Jin K, & Carroll, Malcolm S. Lateral conduction infrared photodetector. United States.
Kim, Jin K, and Carroll, Malcolm S. Tue .
"Lateral conduction infrared photodetector". United States. https://www.osti.gov/servlets/purl/1027204.
@article{osti_1027204,
title = {Lateral conduction infrared photodetector},
author = {Kim, Jin K and Carroll, Malcolm S},
abstractNote = {A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {9}
}
Works referenced in this record:
InAs/(GaIn)Sb short-period superlattices for focal plane arrays
conference, May 2005
- Rehm, Robert; Walther, Martin; Schmitz, Johannes
- Defense and Security, SPIE Proceedings
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
journal, May 1987
- Adachi, Sadao
- Journal of Applied Physics, Vol. 61, Issue 10
Type-II InAs/GaInSb superlattices for infrared detection: an overview
conference, May 2005
- Brown, Gail J.
- Defense and Security, SPIE Proceedings
Competitive technologies of third generation infrared photon detectors
journal, January 2006
- Rogalski, A.
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