Low loss, high and low index contrast waveguides in semiconductors

Bond, Tiziana; Cole, Garrett; Goddard, Lynford; Kallman, Jeff

Title: Low loss, high and low index contrast waveguides in semiconductors

Abstract

A system in one general embodiment includes a waveguide structure comprising a core of an alloy of Group III-V materials surrounded by an oxide (which may include one or more Group III-V metals), wherein an interface of the oxide and core is characterized by oxidation of the alloy for defining the core. A method in one general approach includes oxidizing a waveguide structure comprising an alloy of Group III-V materials for forming a core of the alloy surrounded by an oxide.

Inventors:

Bond, Tiziana ^[1]; Cole, Garrett ^[2]; Goddard, Lynford ^[3]; Kallman, Jeff ^[4]

Livermore, CA
Berkeley, CA
Champaign, IL
Pleasanton, CA

Issue Date:: 2011-08-09

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1025608

Patent Number(s):: 7995892

Application Number:: 12/129,503

Assignee:: Lawrence Livermore National Security, LLC (Livermore, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/227 - Buried mesa structure {
H01S5/2004 - {Confining in the direction perpendicular to the layer structure}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G02B6/1223 - {high refractive index type, i.e. high-contrast waveguides}
G02B6/13 - Integrated optical circuits characterised by the manufacturing method

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/204 - {Strongly index guided structures}

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G02B2006/12078 - {Gallium arsenide or alloys

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DOE Contract Number:: AC52-07NA27344

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Bond, Tiziana, Cole, Garrett, Goddard, Lynford, and Kallman, Jeff. Low loss, high and low index contrast waveguides in semiconductors.  United States: N. p., 2011. 
        Web.

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                    Bond, Tiziana, Cole, Garrett, Goddard, Lynford, & Kallman, Jeff. Low loss, high and low index contrast waveguides in semiconductors.  United States.

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                    Bond, Tiziana, Cole, Garrett, Goddard, Lynford, and Kallman, Jeff. Tue .  
        "Low loss, high and low index contrast waveguides in semiconductors".  United States.  https://www.osti.gov/servlets/purl/1025608.

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@article{osti_1025608,

  title        = {Low loss, high and low index contrast waveguides in semiconductors},

  author       = {Bond, Tiziana and Cole, Garrett and Goddard, Lynford and Kallman, Jeff},

  abstractNote = {A system in one general embodiment includes a waveguide structure comprising a core of an alloy of Group III-V materials surrounded by an oxide (which may include one or more Group III-V metals), wherein an interface of the oxide and core is characterized by oxidation of the alloy for defining the core. A method in one general approach includes oxidizing a waveguide structure comprising an alloy of Group III-V materials for forming a core of the alloy surrounded by an oxide.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2011},

  month        = {8}

}

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Works referenced in this record:

Native oxides on AlGaAs epilayer
journal, January 1999

Ghita, R. V.; Vasile, E.; Cengher, D.
Thin Solid Films, Vol. 338, Issue 1-2
https://doi.org/10.1016/S0040-6090(98)00973-0

Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation
journal, August 2007

Liang, D.; Hall, D. C.
Applied Physics Letters, Vol. 91, Issue 6
https://doi.org/10.1063/1.2766859

Advances in selective wet oxidation of AlGaAs alloys
journal, June 1997

Choquette, K. D.; Geib, K. M.; Ashby, C. I. H.
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, Issue 3, p. 916-926
https://doi.org/10.1109/2944.640645

Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers
journal, February 2000

Sfigakis, F.; Paddon, P.; Pacradouni, V.
Journal of Lightwave Technology, Vol. 18, Issue 2
https://doi.org/10.1109/50.822793

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Similar Records

Title: Low loss, high and low index contrast waveguides in semiconductors

Abstract

Citation Formats

Native oxides on AlGaAs epilayer journal, January 1999

Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation journal, August 2007

Advances in selective wet oxidation of AlGaAs alloys journal, June 1997

Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers journal, February 2000

Native oxides on AlGaAs epilayer
journal, January 1999

Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation
journal, August 2007

Advances in selective wet oxidation of AlGaAs alloys
journal, June 1997

Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers
journal, February 2000