Diluted magnetic semiconductor nanowires exhibiting magnetoresistance
Abstract
A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.
- Inventors:
-
- El Cerrito, CA
- Seoul, KR
- Daejeon, KR
- Albany, CA
- Berkeley, CA
- Issue Date:
- Research Org.:
- University of California (Oakland, CA)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1024109
- Patent Number(s):
- 8003497
- Application Number:
- 11/480,280
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
- DOE Contract Number:
- FG03-02ER46021
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE
Citation Formats
Yang, Peidong, Choi, Heonjin, Lee, Sangkwon, He, Rongrui, Zhang, Yanfeng, Kuykendal, Tevye, and Pauzauskie, Peter. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance. United States: N. p., 2011.
Web.
Yang, Peidong, Choi, Heonjin, Lee, Sangkwon, He, Rongrui, Zhang, Yanfeng, Kuykendal, Tevye, & Pauzauskie, Peter. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance. United States.
Yang, Peidong, Choi, Heonjin, Lee, Sangkwon, He, Rongrui, Zhang, Yanfeng, Kuykendal, Tevye, and Pauzauskie, Peter. Tue .
"Diluted magnetic semiconductor nanowires exhibiting magnetoresistance". United States. https://www.osti.gov/servlets/purl/1024109.
@article{osti_1024109,
title = {Diluted magnetic semiconductor nanowires exhibiting magnetoresistance},
author = {Yang, Peidong and Choi, Heonjin and Lee, Sangkwon and He, Rongrui and Zhang, Yanfeng and Kuykendal, Tevye and Pauzauskie, Peter},
abstractNote = {A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {8}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Photoluminescence spectra and ferromagnetic properties of GaMnN nanowires
journal, June 2003
- Deepak, F. L.; Vanitha, P. V.; Govindaraj, A.
- Chemical Physics Letters, Vol. 374, Issue 3-4
Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
journal, August 2003
- Kuykendall, Tevye; Pauzauskie, Peter; Lee, Sangkwon
- Nano Letters, Vol. 3, Issue 8
Watching GaN Nanowires Grow
journal, June 2003
- Stach, Eric A.; Pauzauskie, Peter J.; Kuykendall, Tevye
- Nano Letters, Vol. 3, Issue 6
Growth of semiconductor gallium nitride nanowires with different catalysts
journal, January 2003
- Zhang, Jun; Zhang, Lide
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
journal, March 2003
- Zhong, Zhaohui; Qian, Fang; Wang, Deli
- Nano Letters, Vol. 3, Issue 3