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Title: Propagation of misfit dislocations from buffer/Si interface into Si

Abstract

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Inventors:
 [1];  [2];  [3];  [4]
  1. El Sobrante, CA
  2. Porto Alegre, BR
  3. Richmond, VA
  4. Raleigh, VA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1023920
Patent Number(s):
8008181
Application Number:
12/540,274
Assignee:
The Regents of The University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Liliental-Weber, Zuzanna, Maltez, Rogerio Luis, Morkoc, Hadis, and Xie, Jinqiao. Propagation of misfit dislocations from buffer/Si interface into Si. United States: N. p., 2011. Web.
Liliental-Weber, Zuzanna, Maltez, Rogerio Luis, Morkoc, Hadis, & Xie, Jinqiao. Propagation of misfit dislocations from buffer/Si interface into Si. United States.
Liliental-Weber, Zuzanna, Maltez, Rogerio Luis, Morkoc, Hadis, and Xie, Jinqiao. Tue . "Propagation of misfit dislocations from buffer/Si interface into Si". United States. https://www.osti.gov/servlets/purl/1023920.
@article{osti_1023920,
title = {Propagation of misfit dislocations from buffer/Si interface into Si},
author = {Liliental-Weber, Zuzanna and Maltez, Rogerio Luis and Morkoc, Hadis and Xie, Jinqiao},
abstractNote = {Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {8}
}

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Works referenced in this record:

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