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Title: Atomic-level imaging, processing and characterization of semiconductor surfaces

A method for selecting and removing single specific atoms from a solid material surface uses photon biasing to break down bonds that hold the selected atom in the lattice and to reduce barrier effects that hold the atom from transferring to a probe. The photon bias is preferably light or other electromagnetic radiation with a wavelength and frequency that approximately matches the wave function of the target atom species to be removed to induce high energy, selective thermionic-like vibration. An electric field potential is then applied between the probe and the surface of the solid material to pull the atom out of the lattice and to transfer the atom to the probe. Different extrinsic atoms can be installed in the lattice sites that are vacated by the removed atoms by using a photon bias that resonates the extrinsic atom species, reversing polarity of the electric field, and blowing gas comprising the extrinsic atoms through a hollow catheter probe. 8 figs.
Inventors:
Issue Date:
OSTI Identifier:
101906
Assignee:
Midwest Research Inst., Kansas City, MO (United States) CHO; SCA: 360601; PA: EDB-95:130726; SN: 95001445710
Patent Number(s):
US 5,444,260/A/
Application Number:
PAN: 8-087,630
Contract Number:
AC02-83CH10093
Resource Relation:
Other Information: PBD: 22 Aug 1995
Research Org:
Midwest Research Institute; National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; CRYSTAL DOPING; SURFACE TREATMENTS; CHEMICAL BONDS; REMOVAL; LATTICE VIBRATIONS; CRYSTAL LATTICES; ATOMS

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