Method for depositing high-quality microcrystalline semiconductor materials
Abstract
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
- Inventors:
-
- Bloomfield Hills, MI
- Troy, MI
- Rochester Hills, MI
- Issue Date:
- Research Org.:
- United Solar Ovonic LLC (Auburn Hills, MI)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1018061
- Patent Number(s):
- 7902049
- Application Number:
- 10/765,435
- Assignee:
- United Solar Ovonic LLC (Auburn Hills, MI)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- ZDJ-2-30630-19
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Guha, Subhendu, Yang, Chi C, and Yan, Baojie. Method for depositing high-quality microcrystalline semiconductor materials. United States: N. p., 2011.
Web.
Guha, Subhendu, Yang, Chi C, & Yan, Baojie. Method for depositing high-quality microcrystalline semiconductor materials. United States.
Guha, Subhendu, Yang, Chi C, and Yan, Baojie. Tue .
"Method for depositing high-quality microcrystalline semiconductor materials". United States. https://www.osti.gov/servlets/purl/1018061.
@article{osti_1018061,
title = {Method for depositing high-quality microcrystalline semiconductor materials},
author = {Guha, Subhendu and Yang, Chi C and Yan, Baojie},
abstractNote = {A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {3}
}
Works referenced in this record:
Material and solar cell research in microcrystalline silicon
journal, July 2003
- Shah, A. V.; Meier, J.; Vallat-Sauvain, E.
- Solar Energy Materials and Solar Cells, Vol. 78, Issue 1-4