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Title: Method for depositing high-quality microcrystalline semiconductor materials

Abstract

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Inventors:
 [1];  [2];  [3]
  1. Bloomfield Hills, MI
  2. Troy, MI
  3. Rochester Hills, MI
Issue Date:
Research Org.:
United Solar Ovonic LLC (Auburn Hills, MI)
Sponsoring Org.:
USDOE
OSTI Identifier:
1018061
Patent Number(s):
7902049
Application Number:
10/765,435
Assignee:
United Solar Ovonic LLC (Auburn Hills, MI)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
DOE Contract Number:  
ZDJ-2-30630-19
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Guha, Subhendu, Yang, Chi C, and Yan, Baojie. Method for depositing high-quality microcrystalline semiconductor materials. United States: N. p., 2011. Web.
Guha, Subhendu, Yang, Chi C, & Yan, Baojie. Method for depositing high-quality microcrystalline semiconductor materials. United States.
Guha, Subhendu, Yang, Chi C, and Yan, Baojie. Tue . "Method for depositing high-quality microcrystalline semiconductor materials". United States. https://www.osti.gov/servlets/purl/1018061.
@article{osti_1018061,
title = {Method for depositing high-quality microcrystalline semiconductor materials},
author = {Guha, Subhendu and Yang, Chi C and Yan, Baojie},
abstractNote = {A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {3}
}

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Works referenced in this record:

Material and solar cell research in microcrystalline silicon
journal, July 2003