Growth of and defect reduction in nanoscale materials
Abstract
Methods by which the growth of a nanostructure may be precisely controlled by an electrical current are described here. In one embodiment, an interior nanostructure is grown to a predetermined geometry inside another nanostructure, which serves as a reaction chamber. The growth is effected by a catalytic agent loaded with feedstock for the interior nanostructure. Another embodiment allows a preexisting marginal quality nanostructure to be zone refined into a higher-quality nanostructure by driving a catalytic agent down a controlled length of the nanostructure with an electric current. In both embodiments, the speed of nanostructure formation is adjustable, and the growth may be stopped and restarted at will. The catalytic agent may be doped or undoped to produce semiconductor effects, and the bead may be removed via acid etching.
- Inventors:
-
- Berkeley, CA
- San Francisco, CA
- Kensington, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1017467
- Patent Number(s):
- 7862793
- Application Number:
- 11/278,999
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Jensen, Kenneth J, Mickelson, William E, and Zettl, Alex K. Growth of and defect reduction in nanoscale materials. United States: N. p., 2011.
Web.
Jensen, Kenneth J, Mickelson, William E, & Zettl, Alex K. Growth of and defect reduction in nanoscale materials. United States.
Jensen, Kenneth J, Mickelson, William E, and Zettl, Alex K. Tue .
"Growth of and defect reduction in nanoscale materials". United States. https://www.osti.gov/servlets/purl/1017467.
@article{osti_1017467,
title = {Growth of and defect reduction in nanoscale materials},
author = {Jensen, Kenneth J and Mickelson, William E and Zettl, Alex K},
abstractNote = {Methods by which the growth of a nanostructure may be precisely controlled by an electrical current are described here. In one embodiment, an interior nanostructure is grown to a predetermined geometry inside another nanostructure, which serves as a reaction chamber. The growth is effected by a catalytic agent loaded with feedstock for the interior nanostructure. Another embodiment allows a preexisting marginal quality nanostructure to be zone refined into a higher-quality nanostructure by driving a catalytic agent down a controlled length of the nanostructure with an electric current. In both embodiments, the speed of nanostructure formation is adjustable, and the growth may be stopped and restarted at will. The catalytic agent may be doped or undoped to produce semiconductor effects, and the bead may be removed via acid etching.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {1}
}
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