Title: Release strategies for making transferable semiconductor structures, devices and device components

Abstract

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Inventors:

Rogers, John A ^[1]; Nuzzo, Ralph G ^[1]; Meitl, Matthew ^[2]; Ko, Heung Cho ^[3]; Yoon, Jongseung ^[3]; Menard, Etienne ^[4]; Baca, Alfred J ^[3]

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+ Show Inventor Affiliations

1. Champaign, IL
2. Raleigh, NC
3. Urbana, IL
4. Durham, NC

Issue Date:

2011-04-26

Research Org.:

Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1016565

Patent Number(s):

7932123

Application Number:

US Patent Application 11/858,788

Assignee:

The Board of Trustees of the University of Illinois (Urbana, IL)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C1/0046 - {using stamping, e.g. imprinting
B81C2201/0191 - Transfer of a layer from a carrier wafer to a device wafer

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/6835 - {using temporarily an auxiliary support}
H01L21/7813 - {leaving a reusable substrate, e.g. epitaxial lift off}
H01L2221/68368 - used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
H01L2224/95001 - involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
H01L29/155 - {Comprising only semiconductor materials
H01L29/20 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L2924/13091 - Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
H01L31/03046 - {including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP}
H01L31/068 - the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L31/0687 - Multiple junction or tandem solar cells
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/0725 - Multiple junction or tandem solar cells
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/52 - PV systems with concentrators
Y02E10/544 - Solar cells from Group III-V materials
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T156/1195 - Delaminating from release surface

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DOE Contract Number:  

FG02-91ER45439

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE