Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers
Abstract
A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1016541
- Patent Number(s):
- 7902047
- Application Number:
- 12/180,280
- Assignee:
- The United States of America as represented by the United States Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2008 Jul 25
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Kulkarni, Nagraj S., and Kasica, Richard J. Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers. United States: N. p., 2011.
Web.
Kulkarni, Nagraj S., & Kasica, Richard J. Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers. United States.
Kulkarni, Nagraj S., and Kasica, Richard J. Tue .
"Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers". United States. https://www.osti.gov/servlets/purl/1016541.
@article{osti_1016541,
title = {Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers},
author = {Kulkarni, Nagraj S. and Kasica, Richard J.},
abstractNote = {A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {3}
}
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