Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers

Title: Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers

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Abstract

A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.

Inventors:

Kulkarni, Nagraj S ^[1]; Kasica, Richard J. ^[2]

Knoxville, TN
(Ashburn, VA) ,

Issue Date:: 2011-03-08

Research Org.:: The United States of America as represented by the United States Department of Energy (Washington, DC) N/A (

Sponsoring Org.:: USDOE

OSTI Identifier:: 1016541

Patent Number(s):: 7,902,047

Application Number:: US Patent Application 12/180,280

Assignee:: The United States of America as represented by the United States Department of Energy (Washington, DC) N/A ( ORO

DOE Contract Number:: AC05-00OR22725

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Kulkarni, Nagraj S, and Kasica, Richard J. Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers.  United States: N. p., 2011. 
        Web.

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                    Kulkarni, Nagraj S, & Kasica, Richard J. Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers.  United States.

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                    Kulkarni, Nagraj S, and Kasica, Richard J. Tue .  
        "Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers".  United States.  https://www.osti.gov/servlets/purl/1016541.

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@article{osti_1016541,

  title        = {Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers},

  author       = {Kulkarni, Nagraj S and Kasica, Richard J.},

  abstractNote = {A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2011},

  month        = {3}

}

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