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Title: Method to fabricate a tilted logpile photonic crystal

Abstract

A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180.degree. about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.

Inventors:
 [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
Sandia Corporation (Albuquerque, NM)
Sponsoring Org.:
USDOE
OSTI Identifier:
1016015
Patent Number(s):
7,820,365
Application Number:
11/779,605
Assignee:
Sandia Corporation (Albuquerque, NM) NNSASC
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Williams, John D., and Sweatt, William C. Method to fabricate a tilted logpile photonic crystal. United States: N. p., 2010. Web.
Williams, John D., & Sweatt, William C. Method to fabricate a tilted logpile photonic crystal. United States.
Williams, John D., and Sweatt, William C. Tue . "Method to fabricate a tilted logpile photonic crystal". United States. https://www.osti.gov/servlets/purl/1016015.
@article{osti_1016015,
title = {Method to fabricate a tilted logpile photonic crystal},
author = {Williams, John D. and Sweatt, William C.},
abstractNote = {A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180.degree. about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {10}
}

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