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Title: Method of doping organic semiconductors

Abstract

An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.

Inventors:
 [1];  [2];  [3]
  1. Constance, DE
  2. Summit, NJ
  3. New Providence, NJ
Issue Date:
Research Org.:
Alcatel-Lucent USA Inc. (Murray Hill, NJ) The Trustees of Columbia University (New York, NY)
Sponsoring Org.:
USDOE
OSTI Identifier:
1015984
Patent Number(s):
7821000
Application Number:
12/024,484
Assignee:
Alcatel-Lucent USA Inc. (Murray Hill, NJ) The Trustees of Columbia University (New York, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-04ER46118
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kloc, Christian Leo, Ramirez, Arthur Penn, and So, Woo-Young. Method of doping organic semiconductors. United States: N. p., 2010. Web.
Kloc, Christian Leo, Ramirez, Arthur Penn, & So, Woo-Young. Method of doping organic semiconductors. United States.
Kloc, Christian Leo, Ramirez, Arthur Penn, and So, Woo-Young. Tue . "Method of doping organic semiconductors". United States. https://www.osti.gov/servlets/purl/1015984.
@article{osti_1015984,
title = {Method of doping organic semiconductors},
author = {Kloc, Christian Leo and Ramirez, Arthur Penn and So, Woo-Young},
abstractNote = {An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {10}
}

Works referenced in this record:

Mobility-independent doping in crystalline rubrene field-effect transistors
journal, June 2007


The Effect of Oxygen on the Photoconductivity of Anthracene. II
journal, June 1954


Field-effect transistors on rubrene single crystals with parylene gate insulator
journal, March 2003


Humidity effect on electrical performance of organic thin-film transistors
journal, January 2005


Light-induced switching in back-gated organic transistors with built-in conduction channel
journal, December 2004


Determination of the inertial contribution to the nonlinear refractive index of air, N_2, and O_2 by use of unfocused high-intensity femtosecond laser pulses
journal, January 1997