Title: Nanowire structures and electrical devices

Abstract

The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

Inventors:

Bezryadin, Alexey ^[1]; Remeika, Mikas ^[2]

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1. Champaign, IL
2. Urbana, IL

Issue Date:

Tue Jul 06 00:00:00 EDT 2010

Research Org.:

Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1015642

Patent Number(s):

7749922

Application Number:

11/417,370

Assignee:

The Board of Trustees of the University of Illinois (Urbana, IL)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0673 - {oriented parallel to a substrate}
H01L29/7613 - {Single electron transistors

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/936 - in a transistor or 3-terminal device
Y10S977/937 - Single electron transistor
Y10S977/938 - Field effect transistors, FETS, with nanowire- or nanotube-channel region

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DOE Contract Number:  

FG02-91ER45439

Resource Type:

Patent

Country of Publication:

United States

Language:

English