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Title: Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films

Abstract

A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

Inventors:
 [1];  [2];  [2];  [2]
  1. Tijeras, NM
  2. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1015463
Patent Number(s):
7915626
Application Number:
US Patent Application 11/504,885
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Allerman, Andrew A, Crawford, Mary H, Koleske, Daniel D, and Lee, Stephen R. Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films. United States: N. p., 2011. Web.
Allerman, Andrew A, Crawford, Mary H, Koleske, Daniel D, & Lee, Stephen R. Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films. United States.
Allerman, Andrew A, Crawford, Mary H, Koleske, Daniel D, and Lee, Stephen R. Tue . "Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films". United States. https://www.osti.gov/servlets/purl/1015463.
@article{osti_1015463,
title = {Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films},
author = {Allerman, Andrew A and Crawford, Mary H and Koleske, Daniel D and Lee, Stephen R},
abstractNote = {A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {3}
}

Works referenced in this record:

Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
journal, June 2003


Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
journal, October 2005