Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films
Abstract
A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
- Inventors:
-
- Tijeras, NM
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1015463
- Patent Number(s):
- 7915626
- Application Number:
- US Patent Application 11/504,885
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Allerman, Andrew A, Crawford, Mary H, Koleske, Daniel D, and Lee, Stephen R. Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films. United States: N. p., 2011.
Web.
Allerman, Andrew A, Crawford, Mary H, Koleske, Daniel D, & Lee, Stephen R. Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films. United States.
Allerman, Andrew A, Crawford, Mary H, Koleske, Daniel D, and Lee, Stephen R. Tue .
"Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films". United States. https://www.osti.gov/servlets/purl/1015463.
@article{osti_1015463,
title = {Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films},
author = {Allerman, Andrew A and Crawford, Mary H and Koleske, Daniel D and Lee, Stephen R},
abstractNote = {A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {3}
}
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Works referenced in this record:
Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
journal, June 2003
- Kida, Yoshihiro; Shibata, Tomohiko; Miyake, Hideto
- Japanese Journal of Applied Physics, Vol. 42, Issue Part 2, No. 6A
Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
journal, October 2005
- Wang, T.; Bai, J.; Parbrook, P. J.
- Applied Physics Letters, Vol. 87, Issue 15