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Title: Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Abstract

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Inventors:
 [1];  [1];  [2]
  1. Madison, WI
  2. Middleton, WI
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation (Madison, WI)
Sponsoring Org.:
USDOE
OSTI Identifier:
1015296
Patent Number(s):
7888583
Application Number:
US Patent Application 11/745,156
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same. United States: N. p., 2011. Web.
Lagally, Max G, Evans, Paul G, & Ritz, Clark S. Semiconductor nanowire thermoelectric materials and devices, and processes for producing same. United States.
Lagally, Max G, Evans, Paul G, and Ritz, Clark S. Tue . "Semiconductor nanowire thermoelectric materials and devices, and processes for producing same". United States. https://www.osti.gov/servlets/purl/1015296.
@article{osti_1015296,
title = {Semiconductor nanowire thermoelectric materials and devices, and processes for producing same},
author = {Lagally, Max G and Evans, Paul G and Ritz, Clark S},
abstractNote = {The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 15 00:00:00 EST 2011},
month = {Tue Feb 15 00:00:00 EST 2011}
}

Works referenced in this record:

Silicon Nanomembranes
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Vapor-liquid-solid growth of germanium nanostructures on silicon
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Miniband formation in a quantum dot crystal
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SEMICONDUCTOR NANOWIRES AND NANOTUBES
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Combined Thermoelectric and Structure Characterizations of Patterned Nanowires
conference, August 2006


Ge molecular beam epitaxy on Si(113): surface structures, nanowires and nanodots
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Nano-patterned Growth of Ge Quantum Dots for Infrared Detector Applications
journal, January 2005


Bulk Quantities of Single-Crystal Silicon Micro-/Nanoribbons Generated from Bulk Wafers
journal, October 2006


Thermal conductivity of Si/SiGe superlattice nanowires
journal, October 2003


A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates
journal, January 2006


Thermoelectric properties of superlattice nanowires
journal, August 2003


Tight-binding modeling of thermoelectric properties of bismuth telluride
journal, January 2006


Reversible Thermoelectric Nanomaterials
journal, March 2005


Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition
journal, December 2005