Optoelectronic devices utilizing materials having enhanced electronic transitions
Abstract
An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.
- Inventors:
-
- Newton, MA
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1015206
- Patent Number(s):
- 7893512
- Application Number:
- US Patent Application 11/712,128
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC51-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States: N. p., 2011.
Web.
Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States.
Black, Marcie R. Tue .
"Optoelectronic devices utilizing materials having enhanced electronic transitions". United States. https://www.osti.gov/servlets/purl/1015206.
@article{osti_1015206,
title = {Optoelectronic devices utilizing materials having enhanced electronic transitions},
author = {Black, Marcie R},
abstractNote = {An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {2}
}
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