skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Optoelectronic devices utilizing materials having enhanced electronic transitions

Abstract

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Inventors:
 [1]
  1. Newton, MA
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1015206
Patent Number(s):
7893512
Application Number:
US Patent Application 11/712,128
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC51-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States: N. p., 2011. Web.
Black, Marcie R. Optoelectronic devices utilizing materials having enhanced electronic transitions. United States.
Black, Marcie R. Tue . "Optoelectronic devices utilizing materials having enhanced electronic transitions". United States. https://www.osti.gov/servlets/purl/1015206.
@article{osti_1015206,
title = {Optoelectronic devices utilizing materials having enhanced electronic transitions},
author = {Black, Marcie R},
abstractNote = {An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {2}
}

Patent:

Save / Share:

Works referenced in this record:

Electronic band structure of high-index silicon nanowires
journal, October 2005


Quantum Confinement and Electronic Properties of Silicon Nanowires
journal, June 2004


Polarization-sensitive optical phenomena in semiconducting and metallic nanowires
journal, September 2005


Intersubband transitions in bismuth nanowires
journal, December 2000


Transport properties of Bi nanowire arrays
journal, June 2000


Small-Diameter Silicon Nanowire Surfaces
journal, February 2003


Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
journal, June 1997


Aligned Single-Crystalline Si Nanowire Arrays for Photovoltaic Applications
journal, September 2005