Optically initiated silicon carbide high voltage switch
Abstract
An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
- Inventors:
-
- Livermore, CA
- Manteca, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1015203
- Patent Number(s):
- 7893541
- Application Number:
- US Patent Application 11/586,468
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Caporaso, George J., Sampayan, Stephen E., Sullivan, James S., and Sanders, David M. Optically initiated silicon carbide high voltage switch. United States: N. p., 2011.
Web.
Caporaso, George J., Sampayan, Stephen E., Sullivan, James S., & Sanders, David M. Optically initiated silicon carbide high voltage switch. United States.
Caporaso, George J., Sampayan, Stephen E., Sullivan, James S., and Sanders, David M. Tue .
"Optically initiated silicon carbide high voltage switch". United States. https://www.osti.gov/servlets/purl/1015203.
@article{osti_1015203,
title = {Optically initiated silicon carbide high voltage switch},
author = {Caporaso, George J. and Sampayan, Stephen E. and Sullivan, James S. and Sanders, David M.},
abstractNote = {An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {2}
}
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