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Title: Optically initiated silicon carbide high voltage switch

Abstract

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

Inventors:
 [1];  [2];  [1];  [1]
  1. Livermore, CA
  2. Manteca, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1015203
Patent Number(s):
7893541
Application Number:
US Patent Application 11/586,468
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Caporaso, George J., Sampayan, Stephen E., Sullivan, James S., and Sanders, David M. Optically initiated silicon carbide high voltage switch. United States: N. p., 2011. Web.
Caporaso, George J., Sampayan, Stephen E., Sullivan, James S., & Sanders, David M. Optically initiated silicon carbide high voltage switch. United States.
Caporaso, George J., Sampayan, Stephen E., Sullivan, James S., and Sanders, David M. Tue . "Optically initiated silicon carbide high voltage switch". United States. https://www.osti.gov/servlets/purl/1015203.
@article{osti_1015203,
title = {Optically initiated silicon carbide high voltage switch},
author = {Caporaso, George J. and Sampayan, Stephen E. and Sullivan, James S. and Sanders, David M.},
abstractNote = {An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {2}
}

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Works referenced in this record:

Opportunities for employing silicon carbide in high power photo-switches
conference, January 2003


High gradient insulator technology for the dielectric wall accelerator
conference, January 1995


Methods and configurations for improving photo-conductive switch performance
conference, January 2002

  • Nunnally, W. C.; Cooperstock, D.
  • Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop. International Power Modulator Conference, Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.
  • https://doi.org/10.1109/MODSYM.2002.1189446

Electric current in dc surface flashover in vacuum
journal, March 1999


4H–SiC photoconductive switching devices for use in high-power applications
journal, May 2003


Optically induced surface flashover switching for the dielectric wall accelerator
conference, January 1995