Plasma-based EUV light source
Abstract
Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.
- Inventors:
-
- Seattle, WA
- Mountlake Terrace, WA
- Issue Date:
- Research Org.:
- The University of Washington (Seattle, WA)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1014955
- Patent Number(s):
- 7825391
- Application Number:
- US Patent Application 12/101,083
- Assignee:
- The University of Washington (Seattle, WA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05G - X-RAY TECHNIQUE
- DOE Contract Number:
- FG03-98ER54460
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Shumlak, Uri, Golingo, Raymond, and Nelson, Brian A. Plasma-based EUV light source. United States: N. p., 2010.
Web.
Shumlak, Uri, Golingo, Raymond, & Nelson, Brian A. Plasma-based EUV light source. United States.
Shumlak, Uri, Golingo, Raymond, and Nelson, Brian A. Tue .
"Plasma-based EUV light source". United States. https://www.osti.gov/servlets/purl/1014955.
@article{osti_1014955,
title = {Plasma-based EUV light source},
author = {Shumlak, Uri and Golingo, Raymond and Nelson, Brian A},
abstractNote = {Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {11}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Spatial deconvolution technique to obtain velocity profiles from chord integrated spectra
journal, April 2003
- Golingo, R. P.; Shumlak, U.
- Review of Scientific Instruments, Vol. 74, Issue 4
Extreme ultraviolet light sources for use in semiconductor lithography—state of the art and future development
journal, November 2004
- Stamm, Uwe
- Journal of Physics D: Applied Physics, Vol. 37, Issue 23
EUV lithography: main challenges
conference, February 2012
- Banine, Vadim; Benschop, Josef P.
- SPIE Proceedings
Sheared flow stabilization experiments in the ZaP flow Z pinch
journal, May 2003
- Shumlak, U.; Nelson, B. A.; Golingo, R. P.
- Physics of Plasmas, Vol. 10, Issue 5
Development of Xe-filled capillary discharge extreme-ultraviolet radiation source for semiconductor lithography
conference, June 2003
- Teramoto, Yusuke; Sato, Hiroto; Bessho, Kazunori
- Microlithography 2003, SPIE Proceedings
High-repetition-rate MPC generator-driven capillary Z-pinch EUV source
conference, May 2004
- Teramoto, Yusuke; Sato, Hiroto; Bessho, Kazunori
- Microlithography 2004, SPIE Proceedings
Xenon recirculation systems for next-generation lithography tools
conference, May 2004
- Greenwood, Joanne R.; Mennie, Darren; Hughes, Carolyn
- Microlithography 2004, SPIE Proceedings
High-power EUV lithography sources based on gas discharges and laser-produced plasmas
conference, June 2003
- Stamm, Uwe; Ahmad, Imtiaz; Balogh, Istvan
- Microlithography 2003, SPIE Proceedings
Simulation of the EUV Spectrum of Xe and Sn Plasmas
journal, November 2004
- Sasaki, A.; Nishihara, K.; Koike, F.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 10, Issue 6
Sheared Flow Stabilization of the Kink Mode in Pinches
journal, October 1995
- Shumlak, U.; Hartman, C. W.
- Physical Review Letters, Vol. 75, Issue 18
Extreme ultraviolet lithography: overview and development status
journal, January 2005
- Silverman, Peter J.
- Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 4, Issue 1
Optimal physical conditions for extreme UV generation
conference, September 2004
- Nastoyashchii, Anatoliy F.
- High-Power Laser Ablation 2004, SPIE Proceedings
Formation of a sheared flow Z pinch
journal, June 2005
- Golingo, R. P.; Shumlak, U.; Nelson, B. A.
- Physics of Plasmas, Vol. 12, Issue 6
In the end it's the bottom line that counts
conference, May 2004
- Brown, Karen H.
- Microlithography 2004, SPIE Proceedings
Characterization of a vacuum-arc discharge in tin vapor using time-resolved plasma imaging and extreme ultraviolet spectrometry
journal, February 2005
- Kieft, E. R.; van der Mullen, J. J. A. M.; Kroesen, G. M. W.
- Physical Review E, Vol. 71, Issue 2
Strong Flow Shear and Reduced Fluctuations in a Reversed-Field Pinch
journal, March 1998
- Chapman, B. E.; Chiang, C. -S.; Prager, S. C.
- Physical Review Letters, Vol. 80, Issue 10
Stabilization of ballooning modes with sheared toroidal rotation
journal, October 1995
- Miller, R. L.; Waelbroeck, F. L.; Hassam, A. B.
- Physics of Plasmas, Vol. 2, Issue 10
Pinch plasma EUV source with particle injection
journal, November 2004
- McGeoch, Malcolm W.
- Journal of Physics D: Applied Physics, Vol. 37, Issue 23
EUV discharge light source based on a dense plasma focus operated with positive and negative polarity
journal, November 2004
- Fomenkov, I. V.; Böwering, N.; Rettig, C. L.
- Journal of Physics D: Applied Physics, Vol. 37, Issue 23
EUV sources using Xe and Sn discharge plasmas
journal, November 2004
- Borisov, Vladimir M.; Eltsov, Aleksander V.; Ivanov, Aleksander S.
- Journal of Physics D: Applied Physics, Vol. 37, Issue 23
Comparison of experimental and simulated extreme ultraviolet spectra of xenon and tin discharges
journal, March 2005
- Kieft, E. R.; Garloff, K.; van der Mullen, J. J. A. M.
- Physical Review E, Vol. 71, Issue 3
Progress in the ASML EUV program
conference, May 2004
- Meiling, Hans; Banine, Vadim; Kuerz, Peter
- Microlithography 2004, SPIE Proceedings
Evidence of Stabilization in the -Pinch
journal, October 2001
- Shumlak, U.; Golingo, R. P.; Nelson, B. A.
- Physical Review Letters, Vol. 87, Issue 20
The effect of sheared axial flow on the linear stability of the Z‐pinch
journal, February 1996
- Arber, T. D.; Howell, D. F.
- Physics of Plasmas, Vol. 3, Issue 2
Effect of toroidal plasma flow and flow shear on global magnetohydrodynamic MHD modes
journal, June 1995
- Chu, M. S.; Greene, J. M.; Jensen, T. H.
- Physics of Plasmas, Vol. 2, Issue 6