Method for formation of high quality back contact with screen-printed local back surface field
Abstract
A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.
- Inventors:
-
- Marietta, GA
- Atlanta, GA
- Issue Date:
- Research Org.:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1014722
- Patent Number(s):
- 7842596
- Application Number:
- US Patent Application 12/116,100
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- FC36-07GO17023
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Rohatgi, Ajeet, and Meemongkolkiat, Vichai. Method for formation of high quality back contact with screen-printed local back surface field. United States: N. p., 2010.
Web.
Rohatgi, Ajeet, & Meemongkolkiat, Vichai. Method for formation of high quality back contact with screen-printed local back surface field. United States.
Rohatgi, Ajeet, and Meemongkolkiat, Vichai. Tue .
"Method for formation of high quality back contact with screen-printed local back surface field". United States. https://www.osti.gov/servlets/purl/1014722.
@article{osti_1014722,
title = {Method for formation of high quality back contact with screen-printed local back surface field},
author = {Rohatgi, Ajeet and Meemongkolkiat, Vichai},
abstractNote = {A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {11}
}
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