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Title: Method for formation of high quality back contact with screen-printed local back surface field

Abstract

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

Inventors:
 [1];  [2]
  1. (Marietta, GA)
  2. (Atlanta, GA)
Issue Date:
Research Org.:
Georgia Tech Research Corporation (Atlanta, GA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1014722
Patent Number(s):
7,842,596
Application Number:
US Patent Application 12/116,100
Assignee:
Georgia Tech Research Corporation (Atlanta, GA) GFO
DOE Contract Number:  
FC36-07GO17023
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Rohatgi, Ajeet, and Meemongkolkiat, Vichai. Method for formation of high quality back contact with screen-printed local back surface field. United States: N. p., 2010. Web.
Rohatgi, Ajeet, & Meemongkolkiat, Vichai. Method for formation of high quality back contact with screen-printed local back surface field. United States.
Rohatgi, Ajeet, and Meemongkolkiat, Vichai. Tue . "Method for formation of high quality back contact with screen-printed local back surface field". United States. https://www.osti.gov/servlets/purl/1014722.
@article{osti_1014722,
title = {Method for formation of high quality back contact with screen-printed local back surface field},
author = {Rohatgi, Ajeet and Meemongkolkiat, Vichai},
abstractNote = {A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {11}
}

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