Direct cooled power electronics substrate

Wiles, Randy H; Wereszczak, Andrew A; Ayers, Curtis W; Lowe, Kirk T

Title: Direct cooled power electronics substrate

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Abstract

The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

Inventors:

Wiles, Randy H ^[1]; Wereszczak, Andrew A ^[2]; Ayers, Curtis W ^[3]; Lowe, Kirk T ^[4]

Powell, TN
Oak Ridge, TN
Kingston, TN
Knoxville, TN

Issue Date:: 2010-09-14

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1014717

Patent Number(s):: 7796388

Application Number:: US Patent Application 12/400,081

Assignee:: UT-Battelle, LLC (Oak Ridge, TN)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L2224/32225 - the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L23/473 - by flowing liquids {
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/15787 - Ceramics, e.g. crystalline carbides, nitrides or oxides
H01L25/07 - the devices being of a type provided for in group H01L29/00
H01L24/32 - {of an individual layer connector}
H01L2924/13091 - Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
H01L2924/1305 - Bipolar Junction Transistor [BJT]

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS
H05K7/20927 - {Liquid coolant without phase change}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L2924/13055 - Insulated gate bipolar transistor [IGBT]
H01L23/3735 - {Laminates or multilayers, e.g. direct bond copper ceramic substrates}

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DOE Contract Number:: AC05-00OR22725

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Wiles, Randy H, Wereszczak, Andrew A, Ayers, Curtis W, and Lowe, Kirk T. Direct cooled power electronics substrate.  United States: N. p., 2010. 
        Web.

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                    Wiles, Randy H, Wereszczak, Andrew A, Ayers, Curtis W, & Lowe, Kirk T. Direct cooled power electronics substrate.  United States.

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                    Wiles, Randy H, Wereszczak, Andrew A, Ayers, Curtis W, and Lowe, Kirk T. Tue .  
        "Direct cooled power electronics substrate".  United States.  https://www.osti.gov/servlets/purl/1014717.

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@article{osti_1014717,

  title        = {Direct cooled power electronics substrate},

  author       = {Wiles, Randy H and Wereszczak, Andrew A and Ayers, Curtis W and Lowe, Kirk T},

  abstractNote = {The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2010},

  month        = {9}

}

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