Direct cooled power electronics substrate
Abstract
The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.
- Inventors:
-
- Powell, TN
- Oak Ridge, TN
- Kingston, TN
- Knoxville, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1014717
- Patent Number(s):
- 7796388
- Application Number:
- US Patent Application 12/400,081
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Wiles, Randy H, Wereszczak, Andrew A, Ayers, Curtis W, and Lowe, Kirk T. Direct cooled power electronics substrate. United States: N. p., 2010.
Web.
Wiles, Randy H, Wereszczak, Andrew A, Ayers, Curtis W, & Lowe, Kirk T. Direct cooled power electronics substrate. United States.
Wiles, Randy H, Wereszczak, Andrew A, Ayers, Curtis W, and Lowe, Kirk T. Tue .
"Direct cooled power electronics substrate". United States. https://www.osti.gov/servlets/purl/1014717.
@article{osti_1014717,
title = {Direct cooled power electronics substrate},
author = {Wiles, Randy H and Wereszczak, Andrew A and Ayers, Curtis W and Lowe, Kirk T},
abstractNote = {The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {9}
}
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