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Title: Boron diffusion in silicon devices

Abstract

Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

Inventors:
 [1];  [1];  [2];  [3]
  1. Atlanta, GA
  2. Smyrna, GA
  3. Stockbridge, GA
Issue Date:
Research Org.:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1014672
Patent Number(s):
7790574
Application Number:
US Patent Application 11/301,527
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FC36-00GO10600
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Rohatgi, Ajeet, Kim, Dong Seop, Nakayashiki, Kenta, and Rounsaville, Brian. Boron diffusion in silicon devices. United States: N. p., 2010. Web.
Rohatgi, Ajeet, Kim, Dong Seop, Nakayashiki, Kenta, & Rounsaville, Brian. Boron diffusion in silicon devices. United States.
Rohatgi, Ajeet, Kim, Dong Seop, Nakayashiki, Kenta, and Rounsaville, Brian. Tue . "Boron diffusion in silicon devices". United States. https://www.osti.gov/servlets/purl/1014672.
@article{osti_1014672,
title = {Boron diffusion in silicon devices},
author = {Rohatgi, Ajeet and Kim, Dong Seop and Nakayashiki, Kenta and Rounsaville, Brian},
abstractNote = {Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {9}
}

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