Method for double-sided processing of thin film transistors

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A; Evans, Paul G; Lagally, Max G; Ma, Zhenqiang

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Title: Method for double-sided processing of thin film transistors

Abstract

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Inventors:

Yuan, Hao-Chih ^[1]; Wang, Guogong ^[1]; Eriksson, Mark A ^[1]; Evans, Paul G ^[1]; Lagally, Max G ^[1]; Ma, Zhenqiang ^[2]

Madison, WI
Middleton, WI

Issue Date:: Tue Apr 08 00:00:00 EDT 2008

Research Org.:: Wisconsin Alumi Research Foundation (Madison, WI)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1014530

Patent Number(s):: 7354809

Application Number:: 11/276,065

Assignee:: Wisconsin Alumi Research Foundation (Madison, WI)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/84 - the substrate being other than a semiconductor body, e.g. being an insulating body
H01L27/1214 - {comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs}
H01L27/1218 - {with a particular composition or structure of the substrate}
H01L27/1266 - {the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate}
H01L29/66772 - {Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
H01L29/78648 - {arranged on opposing sides of the channel}

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DOE Contract Number:: FG02-03ER46028

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, and Ma, Zhenqiang. Method for double-sided processing of thin film transistors.  United States: N. p., 2008. 
        Web.

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                    Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, & Ma, Zhenqiang. Method for double-sided processing of thin film transistors.  United States.

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                    Yuan, Hao-Chih, Wang, Guogong, Eriksson, Mark A, Evans, Paul G, Lagally, Max G, and Ma, Zhenqiang. Tue .  
        "Method for double-sided processing of thin film transistors".  United States.  https://www.osti.gov/servlets/purl/1014530.

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@article{osti_1014530,

  title        = {Method for double-sided processing of thin film transistors},

  author       = {Yuan, Hao-Chih and Wang, Guogong and Eriksson, Mark A and Evans, Paul G and Lagally, Max G and Ma, Zhenqiang},

  abstractNote = {This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Apr 08 00:00:00 EDT 2008},

  month        = {Tue Apr 08 00:00:00 EDT 2008}

}

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Works referenced in this record:

Soft, conformable electrical contacts for organic semiconductors: High-resolution plastic circuits by lamination
journal, July 2002

Loo, Y.-L.; Someya, T.; Baldwin, K. W.
Proceedings of the National Academy of Sciences, Vol. 99, Issue 16, p. 10252-10256
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Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates
journal, August 2005

Sun, Yugang; Kim, Seiyon; Adesida, Ilesanmi
Applied Physics Letters, Vol. 87, Issue 8, Article No. 083501
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Silicon-based nanomembrane materials: the ultimate in strain engineering
conference, January 2006

Yuan, Hao-Chih; Roberts, M. M.; Zhang, Pengpeng
Digest of Papers. 2005 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2005.
https://doi.org/10.1109/SMIC.2005.1587986

Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates
journal, March 2005

Zhu, Z.-T.; Menard, E.; Hurley, K.
Applied Physics Letters, Vol. 86, Issue 13, Article No. 133507
https://doi.org/10.1063/1.1894611

Three-dimensional integration: technology, use, and issues for mixed-signal applications
journal, March 2003

Xue, Lei; Liu, C. C.; Kim, Hong-Seung
IEEE Transactions on Electron Devices, Vol. 50, Issue 3, p. 601-609
https://doi.org/10.1109/TED.2003.810465

Three-Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks
journal, August 2004

Jeon, S.; Menard, E.; Park, J.-U.
Advanced Materials, Vol. 16, Issue 15, p. 1369-1373
https://doi.org/10.1002/adma.200400593

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates
journal, February 2005

Menard, E.; Nuzzo, R. G.; Rogers, J. A.
Applied Physics Letters, Vol. 86, Issue 9, Article No. 093507
https://doi.org/10.1063/1.1866637

A printable form of silicon for high performance thin film transistors on plastic substrates
journal, June 2004

Menard, E.; Lee, K. J.; Khang, D.-Y.
Applied Physics Letters, Vol. 84, Issue 26, p. 5398-5400
https://doi.org/10.1063/1.1767591

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Similar Records

Title: Method for double-sided processing of thin film transistors

Abstract

Citation Formats

Soft, conformable electrical contacts for organic semiconductors: High-resolution plastic circuits by lamination journal, July 2002

Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates journal, August 2005

Silicon-based nanomembrane materials: the ultimate in strain engineering conference, January 2006

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Three-dimensional integration: technology, use, and issues for mixed-signal applications journal, March 2003

Three-Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks journal, August 2004

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates journal, February 2005

A printable form of silicon for high performance thin film transistors on plastic substrates journal, June 2004

Soft, conformable electrical contacts for organic semiconductors: High-resolution plastic circuits by lamination
journal, July 2002

Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates
journal, August 2005

Silicon-based nanomembrane materials: the ultimate in strain engineering
conference, January 2006

Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates
journal, March 2005

Three-dimensional integration: technology, use, and issues for mixed-signal applications
journal, March 2003

Three-Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks
journal, August 2004

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates
journal, February 2005

A printable form of silicon for high performance thin film transistors on plastic substrates
journal, June 2004