Ultra-high current density thin-film Si diode
Abstract
A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
- Inventors:
-
- Littleton, CO
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1014501
- Patent Number(s):
- 7361406
- Application Number:
- 10/488,902
- Assignee:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Wang,, and Qi,. Ultra-high current density thin-film Si diode. United States: N. p., 2008.
Web.
Wang,, & Qi,. Ultra-high current density thin-film Si diode. United States.
Wang,, and Qi,. Tue .
"Ultra-high current density thin-film Si diode". United States. https://www.osti.gov/servlets/purl/1014501.
@article{osti_1014501,
title = {Ultra-high current density thin-film Si diode},
author = {Wang, and Qi,},
abstractNote = {A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {4}
}
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