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Title: Method of junction formation for CIGS photovoltaic devices

Abstract

Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Inventors:
 [1]
  1. Rocky Hill, NJ
Issue Date:
Research Org.:
Energy Photovoltaics (Robbinsville, NJ)
Sponsoring Org.:
USDOE
OSTI Identifier:
1014055
Patent Number(s):
7652209
Application Number:
US Patent Application 11/361,776
Assignee:
Energy Photovoltaics (Robbinsville, NJ)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Delahoy, Alan E. Method of junction formation for CIGS photovoltaic devices. United States: N. p., 2010. Web.
Delahoy, Alan E. Method of junction formation for CIGS photovoltaic devices. United States.
Delahoy, Alan E. Tue . "Method of junction formation for CIGS photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1014055.
@article{osti_1014055,
title = {Method of junction formation for CIGS photovoltaic devices},
author = {Delahoy, Alan E},
abstractNote = {Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {1}
}

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Works referenced in this record:

The role of Cu(InGa)(SeS)/sub 2/ surface layer on a graded band-gap Cu(InGa)Se/sub 2/ thin-film solar cell prepared by two-stage method
conference, January 1996


Development of Cu(InGa)Se 2 Thin Film Solar Cells with Cd-Free Buffer Layers
journal, January 1996