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Title: Method for passivating crystal silicon surfaces

Abstract

In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.

Inventors:
 [1];  [1];  [1];  [1]
  1. Littleton, CO
Issue Date:
Research Org.:
Alliance For Sustainable Energy, LLC (Golden, CO)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013845
Patent Number(s):
7,629,236
Application Number:
US Patent Application 11/574,167
Assignee:
Alliance For Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-99GO10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Qi, Wang, Tihu, Page, Matthew R, and Yan, Yanfa. Method for passivating crystal silicon surfaces. United States: N. p., 2009. Web.
Wang, Qi, Wang, Tihu, Page, Matthew R, & Yan, Yanfa. Method for passivating crystal silicon surfaces. United States.
Wang, Qi, Wang, Tihu, Page, Matthew R, and Yan, Yanfa. Tue . "Method for passivating crystal silicon surfaces". United States. https://www.osti.gov/servlets/purl/1013845.
@article{osti_1013845,
title = {Method for passivating crystal silicon surfaces},
author = {Wang, Qi and Wang, Tihu and Page, Matthew R and Yan, Yanfa},
abstractNote = {In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {12}
}

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