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Title: Aligned crystalline semiconducting film on a glass substrate and method of making

Abstract

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

Inventors:
 [1]
  1. Los Alamos, NM
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013807
Patent Number(s):
7781067
Application Number:
11/581,978
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Findikoglu, Alp T. Aligned crystalline semiconducting film on a glass substrate and method of making. United States: N. p., 2010. Web.
Findikoglu, Alp T. Aligned crystalline semiconducting film on a glass substrate and method of making. United States.
Findikoglu, Alp T. Tue . "Aligned crystalline semiconducting film on a glass substrate and method of making". United States. https://www.osti.gov/servlets/purl/1013807.
@article{osti_1013807,
title = {Aligned crystalline semiconducting film on a glass substrate and method of making},
author = {Findikoglu, Alp T},
abstractNote = {A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {8}
}

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Works referenced in this record:

Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates
journal, June 2005