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Title: Methods for the fabrication of thermally stable magnetic tunnel junctions

Abstract

Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

Inventors:
 [1];  [2];  [3]
  1. Middleton, WI
  2. Madison, WI
  3. Hutchinson, MN
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation (Madison, WI)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013638
Patent Number(s):
7579042
Application Number:
10/902,281
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-99ER45777
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chang, Y Austin, Yang, Jianhua J, and Ladwig, Peter F. Methods for the fabrication of thermally stable magnetic tunnel junctions. United States: N. p., 2009. Web.
Chang, Y Austin, Yang, Jianhua J, & Ladwig, Peter F. Methods for the fabrication of thermally stable magnetic tunnel junctions. United States.
Chang, Y Austin, Yang, Jianhua J, and Ladwig, Peter F. Tue . "Methods for the fabrication of thermally stable magnetic tunnel junctions". United States. https://www.osti.gov/servlets/purl/1013638.
@article{osti_1013638,
title = {Methods for the fabrication of thermally stable magnetic tunnel junctions},
author = {Chang, Y Austin and Yang, Jianhua J and Ladwig, Peter F},
abstractNote = {Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {8}
}

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Metal-Oxide Interfaces in Magnetic Tunnel Junctions
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An in situ x-ray photoelectron spectroscopy study of AlOx spin tunnel barrier formation
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Delocalization and charge disproportionation in La ( 1 x ) Sr x MnO 3
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Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes
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Determination of the thickness of Al oxide films used as barriers in magnetic tunneling junctions
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