Methods for the fabrication of thermally stable magnetic tunnel junctions

Chang, Y Austin; Yang, Jianhua J; Ladwig, Peter F

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Title: Methods for the fabrication of thermally stable magnetic tunnel junctions

Abstract

Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

Inventors:

Chang, Y Austin ^[1]; Yang, Jianhua J ^[2]; Ladwig, Peter F ^[3]

Middleton, WI
Madison, WI
Hutchinson, MN

Issue Date:: 2009-08-25

Research Org.:: Wisconsin Alumni Research Foundation (Madison, WI)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1013638

Patent Number(s):: 7579042

Application Number:: 10/902,281

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49021 - Magnetic recording reproducing transducer [e.g., tape head, core, etc.]

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/224 - {comprising two-terminal components, e.g. diodes, MIM elements}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49002 - Electrical device making

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L43/12 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

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DOE Contract Number:: FG02-99ER45777

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Chang, Y Austin, Yang, Jianhua J, and Ladwig, Peter F. Methods for the fabrication of thermally stable magnetic tunnel junctions.  United States: N. p., 2009. 
        Web.

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                    Chang, Y Austin, Yang, Jianhua J, & Ladwig, Peter F. Methods for the fabrication of thermally stable magnetic tunnel junctions.  United States.

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                    Chang, Y Austin, Yang, Jianhua J, and Ladwig, Peter F. Tue .  
        "Methods for the fabrication of thermally stable magnetic tunnel junctions".  United States.  https://www.osti.gov/servlets/purl/1013638.

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@article{osti_1013638,

  title        = {Methods for the fabrication of thermally stable magnetic tunnel junctions},

  author       = {Chang, Y Austin and Yang, Jianhua J and Ladwig, Peter F},

  abstractNote = {Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2009},

  month        = {8}

}

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Works referenced in this record:

Surface processes and diffusion mechanisms of ion nitriding of stainless steel and aluminium
journal, February 2001

Möller, W.; Parascandola, S.; Telbizova, T.
Surface and Coatings Technology, Vol. 136, Issue 1-3
https://doi.org/10.1016/S0257-8972(00)01015-X

Observation of the barrier structure in magnetic tunnel junctions using high-resolution electron microscopy and electron holography
journal, December 2003

Shen, F.; Zhu, T.; Xiang, X. H.
Applied Physics Letters, Vol. 83, Issue 26
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Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures
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Moodera, Jagadeesh S.; Gallagher, Elizabeth F.; Robinson, Keziah
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Epitaxy, magnetic and tunnel properties of transition metal/MgO(001) heterostructures
journal, June 2003

Boubeta, C. Mart nez; Costa-Kr mer, J. L.; Cebollada, A.
Journal of Physics: Condensed Matter, Vol. 15, Issue 25
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On the use of exchange biased top electrodes in magnetic tunnel junctions
journal, April 2004

Lacour, D.; Durand, O.; Maurice, J. -L.
Journal of Magnetism and Magnetic Materials, Vol. 270, Issue 3
https://doi.org/10.1016/j.jmmm.2003.09.007

Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation
journal, May 2003

Mitani, S.; Moriyama, T.; Takanashi, K.
Journal of Applied Physics, Vol. 93, Issue 10
https://doi.org/10.1063/1.1557338

Metal-Oxide Interfaces in Magnetic Tunnel Junctions
journal, January 2004

Oleynik, I. I.; Tsymbal, E. Y.
Interface Science, Vol. 12, Issue 1
https://doi.org/10.1023/B:INTS.0000012299.56792.ae

An in situ x-ray photoelectron spectroscopy study of AlOx spin tunnel barrier formation
journal, March 2001

Kottler, V.; Gillies, M. F.; Kuiper, A. E. T.
Journal of Applied Physics, Vol. 89, Issue 6
https://doi.org/10.1063/1.1342808

Delocalization and charge disproportionation in ${La}_{(1 - x)} {Sr}_{x} {MnO}_{3}$
journal, February 2004

Banach, G.; Temmerman, W. M.
Physical Review B, Vol. 69, Issue 5
https://doi.org/10.1103/PhysRevB.69.054427

Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes
journal, June 2003

Yu, Ji Hyung; Lee, Hyuck Mo; Ando, Yasuo
Applied Physics Letters, Vol. 82, Issue 26
https://doi.org/10.1063/1.1587271

Determination of the thickness of Al oxide films used as barriers in magnetic tunneling junctions
journal, May 2001

Zhu, W.; Hirschmugl, C. J.; Laine, A. D.
Applied Physics Letters, Vol. 78, Issue 20
https://doi.org/10.1063/1.1372619

Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates
journal, March 2002

Sugahara, Satoshi; Tanaka, Masaaki
Applied Physics Letters, Vol. 80, Issue 11
https://doi.org/10.1063/1.1461425

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Similar Records

Title: Methods for the fabrication of thermally stable magnetic tunnel junctions

Abstract

Citation Formats

Surface processes and diffusion mechanisms of ion nitriding of stainless steel and aluminium journal, February 2001

Observation of the barrier structure in magnetic tunnel junctions using high-resolution electron microscopy and electron holography journal, December 2003

Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures journal, June 1997

Epitaxy, magnetic and tunnel properties of transition metal/MgO(001) heterostructures journal, June 2003

On the use of exchange biased top electrodes in magnetic tunnel junctions journal, April 2004

Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation journal, May 2003

Metal-Oxide Interfaces in Magnetic Tunnel Junctions journal, January 2004

An in situ x-ray photoelectron spectroscopy study of AlOx spin tunnel barrier formation journal, March 2001

Delocalization and charge disproportionation in La ( 1 − x ) Sr x MnO 3 journal, February 2004

Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes journal, June 2003

Determination of the thickness of Al oxide films used as barriers in magnetic tunneling junctions journal, May 2001

Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates journal, March 2002

Surface processes and diffusion mechanisms of ion nitriding of stainless steel and aluminium
journal, February 2001

Observation of the barrier structure in magnetic tunnel junctions using high-resolution electron microscopy and electron holography
journal, December 2003

Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures
journal, June 1997

Epitaxy, magnetic and tunnel properties of transition metal/MgO(001) heterostructures
journal, June 2003

On the use of exchange biased top electrodes in magnetic tunnel junctions
journal, April 2004

Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation
journal, May 2003

Metal-Oxide Interfaces in Magnetic Tunnel Junctions
journal, January 2004

An in situ x-ray photoelectron spectroscopy study of AlOx spin tunnel barrier formation
journal, March 2001

Delocalization and charge disproportionation in ${La}_{(1 - x)} {Sr}_{x} {MnO}_{3}$
journal, February 2004

Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes
journal, June 2003

Determination of the thickness of Al oxide films used as barriers in magnetic tunneling junctions
journal, May 2001

Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates
journal, March 2002