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Title: Silicon-based visible and near-infrared optoelectric devices

Abstract

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Inventors:
 [1];  [2]
  1. Concord, MA
  2. (Newton, MA)
Issue Date:
Research Org.:
President and Fellows of Harvard College (Cambridge, MA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013620
Patent Number(s):
7,781,856
Application Number:
12/365,492
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
DOE Contract Number:  
FC36-01GO11051
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Mazur, Eric, and Carey, III, James E. Silicon-based visible and near-infrared optoelectric devices. United States: N. p., 2010. Web.
Mazur, Eric, & Carey, III, James E. Silicon-based visible and near-infrared optoelectric devices. United States.
Mazur, Eric, and Carey, III, James E. Tue . "Silicon-based visible and near-infrared optoelectric devices". United States. https://www.osti.gov/servlets/purl/1013620.
@article{osti_1013620,
title = {Silicon-based visible and near-infrared optoelectric devices},
author = {Mazur, Eric and Carey, III, James E.},
abstractNote = {In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {8}
}

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