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Title: Controlled growth of larger heterojunction interface area for organic photosensitive devices

Abstract

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

Inventors:
 [1];  [2]
  1. Somerset, NJ
  2. Ann Arbor, MI
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013561
Patent Number(s):
7638356
Application Number:
US Patent Application 11/483,641
Assignee:
The Trustees of Princeton University (Princeton, NJ); The Regents of the University of Michigan (Ann Arbor, MI)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
DOE Contract Number:  
AC36-98GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yang, Fan, and Forrest, Stephen R. Controlled growth of larger heterojunction interface area for organic photosensitive devices. United States: N. p., 2009. Web.
Yang, Fan, & Forrest, Stephen R. Controlled growth of larger heterojunction interface area for organic photosensitive devices. United States.
Yang, Fan, and Forrest, Stephen R. Tue . "Controlled growth of larger heterojunction interface area for organic photosensitive devices". United States. https://www.osti.gov/servlets/purl/1013561.
@article{osti_1013561,
title = {Controlled growth of larger heterojunction interface area for organic photosensitive devices},
author = {Yang, Fan and Forrest, Stephen R},
abstractNote = {An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {12}
}

Works referenced in this record:

Efficient photon harvesting at high optical intensities in ultrathin organic double-heterostructure photovoltaic diodes
journal, May 2000


Controlled growth of a molecular bulk heterojunction photovoltaic cell
journal, December 2004