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Title: Method of transferring strained semiconductor structure

Abstract

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Inventors:
 [1];  [2]
  1. Santa Fe, NM
  2. College Station, TX
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013558
Patent Number(s):
7638410
Application Number:
US Patent Application 11/641,471
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC51-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Nastasi, Michael A, and Shao, Lin. Method of transferring strained semiconductor structure. United States: N. p., 2009. Web.
Nastasi, Michael A, & Shao, Lin. Method of transferring strained semiconductor structure. United States.
Nastasi, Michael A, and Shao, Lin. Tue . "Method of transferring strained semiconductor structure". United States. https://www.osti.gov/servlets/purl/1013558.
@article{osti_1013558,
title = {Method of transferring strained semiconductor structure},
author = {Nastasi, Michael A and Shao, Lin},
abstractNote = {The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {12}
}

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Works referenced in this record:

Epitaxial layer transfer by bond and etch back of porous Si
journal, April 1994


Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
journal, January 1986