Method of transferring strained semiconductor structure
Abstract
The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.
- Inventors:
-
- Santa Fe, NM
- College Station, TX
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1013558
- Patent Number(s):
- 7638410
- Application Number:
- US Patent Application 11/641,471
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC51-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Nastasi, Michael A, and Shao, Lin. Method of transferring strained semiconductor structure. United States: N. p., 2009.
Web.
Nastasi, Michael A, & Shao, Lin. Method of transferring strained semiconductor structure. United States.
Nastasi, Michael A, and Shao, Lin. Tue .
"Method of transferring strained semiconductor structure". United States. https://www.osti.gov/servlets/purl/1013558.
@article{osti_1013558,
title = {Method of transferring strained semiconductor structure},
author = {Nastasi, Michael A and Shao, Lin},
abstractNote = {The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 29 00:00:00 EST 2009},
month = {Tue Dec 29 00:00:00 EST 2009}
}
Works referenced in this record:
Epitaxial layer transfer by bond and etch back of porous Si
journal, April 1994
- Yonehara, Takao; Sakaguchi, Kiyofumi; Sato, Nobuhiko
- Applied Physics Letters, Vol. 64, Issue 16
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
journal, January 1986
- Ishizaka, Akitoshi
- Journal of The Electrochemical Society, Vol. 133, Issue 4