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Title: Bonded semiconductor substrate

Abstract

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Inventors:
;  [1];  [2]
  1. (South Pasadena, CA), Zahler
  2. (Pasadena, CA)
Issue Date:
Research Org.:
California Institute of Technology (Pasadena, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013001
Patent Number(s):
7,755,109
Application Number:
11/430,160
Assignee:
California Institute of Technology (Pasadena, CA) GFO
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Atwater, Jr., Harry A., and James M. Bonded semiconductor substrate. United States: N. p., 2010. Web.
Atwater, Jr., Harry A., & James M. Bonded semiconductor substrate. United States.
Atwater, Jr., Harry A., and James M. Tue . "Bonded semiconductor substrate". United States. https://www.osti.gov/servlets/purl/1013001.
@article{osti_1013001,
title = {Bonded semiconductor substrate},
author = {Atwater, Jr. and Harry A. and James M.},
abstractNote = {Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {7}
}

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