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Title: Bonded semiconductor substrate

Abstract

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Inventors:
;  [1];  [2]
  1. (South Pasadena, CA), Zahler
  2. Pasadena, CA
Issue Date:
Research Org.:
California Institute of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1013001
Patent Number(s):
7755109
Application Number:
11/430,160
Assignee:
California Institute of Technology (Pasadena, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Atwater, Jr, Harry A., and James, M. Bonded semiconductor substrate. United States: N. p., 2010. Web.
Atwater, Jr, Harry A., & James, M. Bonded semiconductor substrate. United States.
Atwater, Jr, Harry A., and James, M. Tue . "Bonded semiconductor substrate". United States. https://www.osti.gov/servlets/purl/1013001.
@article{osti_1013001,
title = {Bonded semiconductor substrate},
author = {Atwater, Jr and Harry A. and James, M},
abstractNote = {Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {7}
}

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Works referenced in this record:

Silicon on insulator material technology
journal, January 1995


Solid‐state reaction‐mediated low‐temperature bonding of GaAs and InP wafers to Si substrates
journal, February 1994


Ge Layer Transfer To Si For Photovoltaic Applications
journal, January 2001


Electrical and Structural Characterization of the Interface of Wafer Bonded InP/Si
journal, January 2003


InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation
journal, December 2003


Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells
conference, January 2002


Controlled surface nanopatterning with buried dislocation arrays
journal, November 2003


Fundamental issues in wafer bonding
journal, July 1999


III-V compounds for solar cell applications
journal, June 1999


Integration of Si and SiGe with Al2O3 (sapphire)
journal, November 2001


Smart-Cut: A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding *1
journal, March 1997


Germanium-on-insulator substrates by wafer bonding
journal, August 2004


Heterogeneous silicon integration by ultra-high vacuum wafer bonding
journal, August 2003


Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
journal, August 2004


Publisher's Note: Donor level of bond-center hydrogen in germanium [Phys. Rev. B 69 , 245207 (2004)]
journal, August 2004


Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure
journal, December 2002


Wafer bonding of silicon wafers covered with various surface layers
journal, October 2000


Strained Si on insulator technology: from materials to devices
journal, August 2004


A “smarter-cut” approach to low temperature silicon layer transfer
journal, January 1998


Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning
journal, October 2001


Hydrophobic silicon wafer bonding
journal, January 1994


Semiconductor Wafer Bonding
journal, August 1998


Multi-junction solar cells and novel structures for solar cell applications
journal, April 2002


Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
journal, March 1997


Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates
journal, June 2004


SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
journal, February 2001


Ge layer transfer to Si for photovoltaic applications
journal, February 2002