Semiconductor light source with electrically tunable emission wavelength
Abstract
A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.
- Inventors:
-
- Port Jefferson, NY
- Bowie, MD
- Centereach, NY
- Setauket, NY
- Elkridge, MD
- Issue Date:
- Research Org.:
- Maxion Technologies, Inc. (Hyattsville, MD)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1012771
- Patent Number(s):
- 7876795
- Application Number:
- 11/206,505
- Assignee:
- Maxion Technologies, Inc. (Hyattsville, MD); The Research Foundation of State University of New York (Albany, NY)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- FG02-02ER83492
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Belenky, Gregory, Bruno, John D, Kisin, Mikhail V, Luryi, Serge, Shterengas, Leon, Suchalkin, Sergey, and Tober, Richard L. Semiconductor light source with electrically tunable emission wavelength. United States: N. p., 2011.
Web.
Belenky, Gregory, Bruno, John D, Kisin, Mikhail V, Luryi, Serge, Shterengas, Leon, Suchalkin, Sergey, & Tober, Richard L. Semiconductor light source with electrically tunable emission wavelength. United States.
Belenky, Gregory, Bruno, John D, Kisin, Mikhail V, Luryi, Serge, Shterengas, Leon, Suchalkin, Sergey, and Tober, Richard L. Tue .
"Semiconductor light source with electrically tunable emission wavelength". United States. https://www.osti.gov/servlets/purl/1012771.
@article{osti_1012771,
title = {Semiconductor light source with electrically tunable emission wavelength},
author = {Belenky, Gregory and Bruno, John D and Kisin, Mikhail V and Luryi, Serge and Shterengas, Leon and Suchalkin, Sergey and Tober, Richard L},
abstractNote = {A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 25 00:00:00 EST 2011},
month = {Tue Jan 25 00:00:00 EST 2011}
}
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