skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

Abstract

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
100995
Patent Number(s):
5,441,897
Application Number:
PAN: 8-197,204
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 15 Aug 1995
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SOLAR CELLS; SEMICONDUCTOR MATERIALS; COPPER SELENIDES; FABRICATION; COPPER SULFIDES; INDIUM SELENIDES; INDIUM SULFIDES; GALLIUM SELENIDES; GALLIUM SULFIDES; CHEMICAL COMPOSITION

Citation Formats

Noufi, R, Gabor, A M, Tuttle, J R, Tennant, A L, Contreras, M A, Albin, D S, and Carapella, J J. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells. United States: N. p., 1995. Web.
Noufi, R, Gabor, A M, Tuttle, J R, Tennant, A L, Contreras, M A, Albin, D S, & Carapella, J J. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells. United States.
Noufi, R, Gabor, A M, Tuttle, J R, Tennant, A L, Contreras, M A, Albin, D S, and Carapella, J J. Tue . "Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells". United States.
@article{osti_100995,
title = {Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells},
author = {Noufi, R and Gabor, A M and Tuttle, J R and Tennant, A L and Contreras, M A and Albin, D S and Carapella, J J},
abstractNote = {A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {8}
}