Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells
A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.
- Issue Date:
- OSTI Identifier:
- 100995
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States) CHO; SCA: 140501; 360601; PA: EDB-95:128861; SN: 95001445728
- Patent Number(s):
- US 5,441,897/A/
- Application Number:
- PAN: 8-197,204
- Contract Number:
- AC02-83CH10093
- Resource Relation:
- Other Information: PBD: 15 Aug 1995
- Research Org:
- Midwest Research Institute; National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SOLAR CELLS; SEMICONDUCTOR MATERIALS; COPPER SELENIDES; FABRICATION; COPPER SULFIDES; INDIUM SELENIDES; INDIUM SULFIDES; GALLIUM SELENIDES; GALLIUM SULFIDES; CHEMICAL COMPOSITION