Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells
Abstract
A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 100995
- Patent Number(s):
- 5,441,897
- Application Number:
- PAN: 8-197,204
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 15 Aug 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SOLAR CELLS; SEMICONDUCTOR MATERIALS; COPPER SELENIDES; FABRICATION; COPPER SULFIDES; INDIUM SELENIDES; INDIUM SULFIDES; GALLIUM SELENIDES; GALLIUM SULFIDES; CHEMICAL COMPOSITION
Citation Formats
Noufi, R, Gabor, A M, Tuttle, J R, Tennant, A L, Contreras, M A, Albin, D S, and Carapella, J J. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells. United States: N. p., 1995.
Web.
Noufi, R, Gabor, A M, Tuttle, J R, Tennant, A L, Contreras, M A, Albin, D S, & Carapella, J J. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells. United States.
Noufi, R, Gabor, A M, Tuttle, J R, Tennant, A L, Contreras, M A, Albin, D S, and Carapella, J J. Tue .
"Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells". United States.
@article{osti_100995,
title = {Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells},
author = {Noufi, R and Gabor, A M and Tuttle, J R and Tennant, A L and Contreras, M A and Albin, D S and Carapella, J J},
abstractNote = {A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {8}
}