Trench process and structure for backside contact solar cells with polysilicon doped regions
Abstract
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
- Inventors:
-
- Woodside, CA
- Menlo Park, CA
- Campbell, CA
- Issue Date:
- Research Org.:
- SunPower Corporation (San Jose, CA)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1009830
- Patent Number(s):
- 7851698
- Application Number:
- 12/392,923
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- FC36-07GO17043
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
De Ceuster, Denis, Cousins, Peter John, and Smith, David D. Trench process and structure for backside contact solar cells with polysilicon doped regions. United States: N. p., 2010.
Web.
De Ceuster, Denis, Cousins, Peter John, & Smith, David D. Trench process and structure for backside contact solar cells with polysilicon doped regions. United States.
De Ceuster, Denis, Cousins, Peter John, and Smith, David D. Tue .
"Trench process and structure for backside contact solar cells with polysilicon doped regions". United States. https://www.osti.gov/servlets/purl/1009830.
@article{osti_1009830,
title = {Trench process and structure for backside contact solar cells with polysilicon doped regions},
author = {De Ceuster, Denis and Cousins, Peter John and Smith, David D},
abstractNote = {A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 14 00:00:00 EST 2010},
month = {Tue Dec 14 00:00:00 EST 2010}
}
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