DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Trench process and structure for backside contact solar cells with polysilicon doped regions

Abstract

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Inventors:
 [1];  [2];  [3]
  1. Woodside, CA
  2. Menlo Park, CA
  3. Campbell, CA
Issue Date:
Research Org.:
SunPower Corporation (San Jose, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1009830
Patent Number(s):
7851698
Application Number:
12/392,923
Assignee:
SunPower Corporation (San Jose, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

De Ceuster, Denis, Cousins, Peter John, and Smith, David D. Trench process and structure for backside contact solar cells with polysilicon doped regions. United States: N. p., 2010. Web.
De Ceuster, Denis, Cousins, Peter John, & Smith, David D. Trench process and structure for backside contact solar cells with polysilicon doped regions. United States.
De Ceuster, Denis, Cousins, Peter John, and Smith, David D. Tue . "Trench process and structure for backside contact solar cells with polysilicon doped regions". United States. https://www.osti.gov/servlets/purl/1009830.
@article{osti_1009830,
title = {Trench process and structure for backside contact solar cells with polysilicon doped regions},
author = {De Ceuster, Denis and Cousins, Peter John and Smith, David D},
abstractNote = {A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {12}
}

Patent:

Works referenced in this record:

Development of chip-size silicon solar cells
conference, January 2000

  • Mulligan, W. P.; Terao, A.; Smith, D. D.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
  • https://doi.org/10.1109/PVSC.2000.915778

A mirror-less design for micro-concentrator modules
conference, January 2000

  • Terao, A.; Mulligan, W. P.; Daroczi, S. G.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
  • https://doi.org/10.1109/PVSC.2000.916158

A flat-plate concentrator: micro-concentrator design overview
conference, January 2000

  • Mulligan, W. P.; Terao, A.; Daroczi, S. G.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
  • https://doi.org/10.1109/PVSC.2000.916177

Simplified backside-contact solar cells
journal, January 1990