Method for passivating crystal silicon surfaces
Abstract
In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.
- Inventors:
-
- Littleton, CO
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1007940
- Patent Number(s):
- 7629236
- Application Number:
- 11/574,167
- Assignee:
- Alliance For Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-99GO10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Wang, Qi, Wang, Tihu, Page, Matthew R, and Yan, Yanfa. Method for passivating crystal silicon surfaces. United States: N. p., 2009.
Web.
Wang, Qi, Wang, Tihu, Page, Matthew R, & Yan, Yanfa. Method for passivating crystal silicon surfaces. United States.
Wang, Qi, Wang, Tihu, Page, Matthew R, and Yan, Yanfa. Tue .
"Method for passivating crystal silicon surfaces". United States. https://www.osti.gov/servlets/purl/1007940.
@article{osti_1007940,
title = {Method for passivating crystal silicon surfaces},
author = {Wang, Qi and Wang, Tihu and Page, Matthew R and Yan, Yanfa},
abstractNote = {In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {12}
}
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