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Title: Methods of controlling hydrogen fluoride pressure during chemical fabrication processes

Abstract

The present invention is a method for producing a crystalline end-product. The method comprising exposing a fluoride-containing precursor to a hydrogen fluoride absorber under conditions suitable for the conversion of the precursor into the crystalline end-product.

Inventors:
 [1];  [2]
  1. Rocky Point, NY
  2. Stony Brook, NY
Issue Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1003012
Patent Number(s):
7622426
Application Number:
11/245,138
Assignee:
Brookhaven Science Associates, LLC (Upton, NY)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Solovyov, Vyacheslav, and Wiesmann, Harold. Methods of controlling hydrogen fluoride pressure during chemical fabrication processes. United States: N. p., 2009. Web.
Solovyov, Vyacheslav, & Wiesmann, Harold. Methods of controlling hydrogen fluoride pressure during chemical fabrication processes. United States.
Solovyov, Vyacheslav, and Wiesmann, Harold. Tue . "Methods of controlling hydrogen fluoride pressure during chemical fabrication processes". United States. https://www.osti.gov/servlets/purl/1003012.
@article{osti_1003012,
title = {Methods of controlling hydrogen fluoride pressure during chemical fabrication processes},
author = {Solovyov, Vyacheslav and Wiesmann, Harold},
abstractNote = {The present invention is a method for producing a crystalline end-product. The method comprising exposing a fluoride-containing precursor to a hydrogen fluoride absorber under conditions suitable for the conversion of the precursor into the crystalline end-product.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {11}
}

Works referenced in this record:

Metalorganic deposition of high‐ J c Ba 2 YCu 3 O 7− x thin films from trifluoroacetate precursors onto (100) SrTiO 3
journal, October 1990


Thick YBa2Cu3O7 films by post annealing of the precursor by high rate e-beam deposition on SrTiO3 substrates
journal, December 1998


Purification of fluoride-containing gases on a fluidized sorbent bed
journal, May 1991


A new method of HF control for synthesizing YBCO using the BaF 2 ex situ process
journal, October 2003


Reproducible technique for fabrication of thin films of high transition temperature superconductors
journal, November 1987


Growth rate limiting mechanisms of YBa2Cu3O7 films manufactured by ex situ processing
journal, May 2001


The NIST Chemistry WebBook:  A Chemical Data Resource on the Internet
journal, September 2001