Method for rapid, controllable growth and thickness, of epitaxial silicon films
Abstract
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.
- Inventors:
-
- Littleton, CO
- Golden, CO
- Boulder, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1001799
- Patent Number(s):
- 7601215
- Application Number:
- 11/560,886
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Wang, Qi, Stradins, Paul, Teplin, Charles, and Branz, Howard M. Method for rapid, controllable growth and thickness, of epitaxial silicon films. United States: N. p., 2009.
Web.
Wang, Qi, Stradins, Paul, Teplin, Charles, & Branz, Howard M. Method for rapid, controllable growth and thickness, of epitaxial silicon films. United States.
Wang, Qi, Stradins, Paul, Teplin, Charles, and Branz, Howard M. Tue .
"Method for rapid, controllable growth and thickness, of epitaxial silicon films". United States. https://www.osti.gov/servlets/purl/1001799.
@article{osti_1001799,
title = {Method for rapid, controllable growth and thickness, of epitaxial silicon films},
author = {Wang, Qi and Stradins, Paul and Teplin, Charles and Branz, Howard M},
abstractNote = {A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {10}
}
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Works referenced in this record:
Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition
journal, January 2006
- Teplin, Charles W.; Page, Matthew; Iwaniczko, Eugene
- MRS Proceedings, Vol. 910
Alternative contact designs for thin epitaxial silicon solar cells
journal, July 1999
- Aiken, Daniel J.; Barnett, Allen M.
- Progress in Photovoltaics: Research and Applications, Vol. 7, Issue 4, p. 275-285
Epitaxial growth of Fe-Si compounds on the silicon (111) face
journal, December 1992
- Vinh, Le Thanh; Chevrier, J.; Derrien, J.
- Physical Review B, Vol. 46, Issue 24
Physics of Solid-Phase Epitaxy of Hydrogenated Amorphous Silicon for Thin Film Si Photovoltaics
journal, January 2006
- Stradins, Paul; Yan, Yanfa; Reedy, Robert
- MRS Proceedings, Vol. 910
Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation
journal, September 1990
- Roth, J. A.; Olson, G. L.; Jacobson, D. C.
- Applied Physics Letters, Vol. 57, Issue 13
Low temperature epitaxial silicon film growth using high vacuum electron‐cyclotron‐resonance plasma deposition
journal, May 1995
- DeBoer, Scott J.; Dalal, Vikram L.; Chumanov, George
- Applied Physics Letters, Vol. 66, Issue 19
Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition
journal, January 2001
- Platen, J.; Selle, B.; Sieber, I.
- Thin Solid Films, Vol. 381, Issue 1
Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment
journal, September 1994
- Da̧browski, J.; Müssig, H. J.; Wolff, G.
- Physical Review Letters, Vol. 73, Issue 12
How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition
journal, January 2006
- Moutinho, H. R.; To, B.; Jiang, C. -S.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 1
Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane
journal, July 1991
- Boland, John J.
- Physical Review B, Vol. 44, Issue 3
Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown
journal, April 2006
- Richardson, Christine E.; Mason, M. S.; Atwater, Harry A.
- Thin Solid Films, Vol. 501, Issue 1-2, p. 332-334
Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures
journal, November 1975
- Schlüter, M.; Chelikowsky, James R.; Louie, Steven G.
- Physical Review B, Vol. 12, Issue 10
Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement
journal, April 1985
- Donahue, T. J.; Reif, R.
- Journal of Applied Physics, Vol. 57, Issue 8
Explanation of the limiting thickness observed in low-temperature silicon epitaxy
journal, November 2000
- Thiesen, Jack; Branz, Howard M.; Crandall, Richard S.
- Applied Physics Letters, Vol. 77, Issue 22