Abstract
This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resonators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.
- Developers:
- Release Date:
- 2009-01-29
- Project Type:
- Closed Source
- Software Type:
- Scientific
- Sponsoring Org.:
-
USDOEPrimary Award/Contract Number:AC04-94AL85000
- Code ID:
- 14216
- Site Accession Number:
- 4336
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Country of Origin:
- United States
Citation Formats
Hadley, G.
fdtd Semiconductor Microlaser Simulator v. 2.0.
Computer Software.
USDOE.
29 Jan. 2009.
Web.
doi:10.11578/dc.20180713.14.
Hadley, G.
(2009, January 29).
fdtd Semiconductor Microlaser Simulator v. 2.0.
[Computer software].
https://doi.org/10.11578/dc.20180713.14.
Hadley, G.
"fdtd Semiconductor Microlaser Simulator v. 2.0." Computer software.
January 29, 2009.
https://doi.org/10.11578/dc.20180713.14.
@misc{
doecode_14216,
title = {fdtd Semiconductor Microlaser Simulator v. 2.0},
author = {Hadley, G.},
abstractNote = {This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resonators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.},
doi = {10.11578/dc.20180713.14},
url = {https://doi.org/10.11578/dc.20180713.14},
howpublished = {[Computer Software] \url{https://doi.org/10.11578/dc.20180713.14}},
year = {2009},
month = {jan}
}