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Title: Materials Data on InGa3 by Materials Project

Abstract

InGa3 is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. In is bonded to twelve equivalent Ga atoms to form InGa12 cuboctahedra that share corners with twelve equivalent InGa12 cuboctahedra, edges with twenty-four equivalent GaIn4Ga8 cuboctahedra, faces with six equivalent InGa12 cuboctahedra, and faces with twelve equivalent GaIn4Ga8 cuboctahedra. All In–Ga bond lengths are 3.10 Å. Ga is bonded to four equivalent In and eight equivalent Ga atoms to form GaIn4Ga8 cuboctahedra that share corners with twelve equivalent GaIn4Ga8 cuboctahedra, edges with eight equivalent InGa12 cuboctahedra, edges with sixteen equivalent GaIn4Ga8 cuboctahedra, faces with four equivalent InGa12 cuboctahedra, and faces with fourteen equivalent GaIn4Ga8 cuboctahedra. All Ga–Ga bond lengths are 3.10 Å.

Publication Date:
Other Number(s):
mp-1184785
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; InGa3; Ga-In
OSTI Identifier:
1749035
DOI:
https://doi.org/10.17188/1749035

Citation Formats

The Materials Project. Materials Data on InGa3 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1749035.
The Materials Project. Materials Data on InGa3 by Materials Project. United States. doi:https://doi.org/10.17188/1749035
The Materials Project. 2020. "Materials Data on InGa3 by Materials Project". United States. doi:https://doi.org/10.17188/1749035. https://www.osti.gov/servlets/purl/1749035. Pub date:Sun May 03 00:00:00 EDT 2020
@article{osti_1749035,
title = {Materials Data on InGa3 by Materials Project},
author = {The Materials Project},
abstractNote = {InGa3 is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. In is bonded to twelve equivalent Ga atoms to form InGa12 cuboctahedra that share corners with twelve equivalent InGa12 cuboctahedra, edges with twenty-four equivalent GaIn4Ga8 cuboctahedra, faces with six equivalent InGa12 cuboctahedra, and faces with twelve equivalent GaIn4Ga8 cuboctahedra. All In–Ga bond lengths are 3.10 Å. Ga is bonded to four equivalent In and eight equivalent Ga atoms to form GaIn4Ga8 cuboctahedra that share corners with twelve equivalent GaIn4Ga8 cuboctahedra, edges with eight equivalent InGa12 cuboctahedra, edges with sixteen equivalent GaIn4Ga8 cuboctahedra, faces with four equivalent InGa12 cuboctahedra, and faces with fourteen equivalent GaIn4Ga8 cuboctahedra. All Ga–Ga bond lengths are 3.10 Å.},
doi = {10.17188/1749035},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}