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Title: Materials Data on Rb2TiSi3O10 by Materials Project

Abstract

Rb2TiSi3O10 crystallizes in the orthorhombic P2_12_12_1 space group. The structure is three-dimensional. there are two inequivalent Rb sites. In the first Rb site, Rb is bonded in a 7-coordinate geometry to seven O atoms. There are a spread of Rb–O bond distances ranging from 2.89–3.19 Å. In the second Rb site, Rb is bonded in a 8-coordinate geometry to eight O atoms. There are a spread of Rb–O bond distances ranging from 2.94–3.36 Å. Ti is bonded to six O atoms to form TiO6 octahedra that share corners with six SiO4 tetrahedra. There are a spread of Ti–O bond distances ranging from 1.93–2.04 Å. There are three inequivalent Si sites. In the first Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share corners with two equivalent TiO6 octahedra and corners with two SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 41–44°. There are a spread of Si–O bond distances ranging from 1.62–1.66 Å. In the second Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share corners with two equivalent TiO6 octahedra and corners with two SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 40–41°. There aremore » a spread of Si–O bond distances ranging from 1.62–1.66 Å. In the third Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share corners with two equivalent TiO6 octahedra and corners with two SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 34–53°. There are a spread of Si–O bond distances ranging from 1.61–1.66 Å. There are ten inequivalent O sites. In the first O site, O is bonded in a distorted bent 120 degrees geometry to one Rb and two Si atoms. In the second O site, O is bonded in a distorted trigonal planar geometry to three Rb atoms. In the third O site, O is bonded in a 2-coordinate geometry to one Rb, one Ti, and one Si atom. In the fourth O site, O is bonded in a distorted bent 150 degrees geometry to two Rb, one Ti, and one Si atom. In the fifth O site, O is bonded in a bent 120 degrees geometry to one Ti and one Si atom. In the sixth O site, O is bonded in a distorted bent 150 degrees geometry to one Rb, one Ti, and one Si atom. In the seventh O site, O is bonded in a distorted bent 120 degrees geometry to two equivalent Rb and two Si atoms. In the eighth O site, O is bonded in a 2-coordinate geometry to two Rb, one Ti, and one Si atom. In the ninth O site, O is bonded in a distorted bent 120 degrees geometry to two Rb and two Si atoms. In the tenth O site, O is bonded in a distorted bent 150 degrees geometry to one Rb, one Ti, and one Si atom.« less

Publication Date:
Other Number(s):
mp-1209611
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Rb2TiSi3O10; O-Rb-Si-Ti
OSTI Identifier:
1744866
DOI:
https://doi.org/10.17188/1744866

Citation Formats

The Materials Project. Materials Data on Rb2TiSi3O10 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1744866.
The Materials Project. Materials Data on Rb2TiSi3O10 by Materials Project. United States. doi:https://doi.org/10.17188/1744866
The Materials Project. 2020. "Materials Data on Rb2TiSi3O10 by Materials Project". United States. doi:https://doi.org/10.17188/1744866. https://www.osti.gov/servlets/purl/1744866. Pub date:Thu Apr 30 00:00:00 EDT 2020
@article{osti_1744866,
title = {Materials Data on Rb2TiSi3O10 by Materials Project},
author = {The Materials Project},
abstractNote = {Rb2TiSi3O10 crystallizes in the orthorhombic P2_12_12_1 space group. The structure is three-dimensional. there are two inequivalent Rb sites. In the first Rb site, Rb is bonded in a 7-coordinate geometry to seven O atoms. There are a spread of Rb–O bond distances ranging from 2.89–3.19 Å. In the second Rb site, Rb is bonded in a 8-coordinate geometry to eight O atoms. There are a spread of Rb–O bond distances ranging from 2.94–3.36 Å. Ti is bonded to six O atoms to form TiO6 octahedra that share corners with six SiO4 tetrahedra. There are a spread of Ti–O bond distances ranging from 1.93–2.04 Å. There are three inequivalent Si sites. In the first Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share corners with two equivalent TiO6 octahedra and corners with two SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 41–44°. There are a spread of Si–O bond distances ranging from 1.62–1.66 Å. In the second Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share corners with two equivalent TiO6 octahedra and corners with two SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 40–41°. There are a spread of Si–O bond distances ranging from 1.62–1.66 Å. In the third Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share corners with two equivalent TiO6 octahedra and corners with two SiO4 tetrahedra. The corner-sharing octahedra tilt angles range from 34–53°. There are a spread of Si–O bond distances ranging from 1.61–1.66 Å. There are ten inequivalent O sites. In the first O site, O is bonded in a distorted bent 120 degrees geometry to one Rb and two Si atoms. In the second O site, O is bonded in a distorted trigonal planar geometry to three Rb atoms. In the third O site, O is bonded in a 2-coordinate geometry to one Rb, one Ti, and one Si atom. In the fourth O site, O is bonded in a distorted bent 150 degrees geometry to two Rb, one Ti, and one Si atom. In the fifth O site, O is bonded in a bent 120 degrees geometry to one Ti and one Si atom. In the sixth O site, O is bonded in a distorted bent 150 degrees geometry to one Rb, one Ti, and one Si atom. In the seventh O site, O is bonded in a distorted bent 120 degrees geometry to two equivalent Rb and two Si atoms. In the eighth O site, O is bonded in a 2-coordinate geometry to two Rb, one Ti, and one Si atom. In the ninth O site, O is bonded in a distorted bent 120 degrees geometry to two Rb and two Si atoms. In the tenth O site, O is bonded in a distorted bent 150 degrees geometry to one Rb, one Ti, and one Si atom.},
doi = {10.17188/1744866},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}