U.S. Department of EnergyOffice of Scientific and Technical Information
Materials Data on V2O5 by Materials Project
Abstract
Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations
- Authors:
- Publication Date:
- Other Number(s):
- mp-1245101
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Collaborations:
- MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE
- Keywords:
- crystal structure; V2O5; O-V
- OSTI Identifier:
- 1738793
- DOI:
- https://doi.org/10.17188/1738793
Citation Formats
The Materials Project. Materials Data on V2O5 by Materials Project. United States: N. p., 2019.
Web. doi:10.17188/1738793.
The Materials Project. Materials Data on V2O5 by Materials Project. United States. doi:https://doi.org/10.17188/1738793
The Materials Project. 2019.
"Materials Data on V2O5 by Materials Project". United States. doi:https://doi.org/10.17188/1738793. https://www.osti.gov/servlets/purl/1738793. Pub date:Tue Jul 02 00:00:00 EDT 2019
@article{osti_1738793,
title = {Materials Data on V2O5 by Materials Project},
author = {The Materials Project},
abstractNote = {Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations},
doi = {10.17188/1738793},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 02 00:00:00 EDT 2019},
month = {Tue Jul 02 00:00:00 EDT 2019}
}
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Works referenced in this record:
High sensitivity extended gate effect transistor based on V2O5 nanorods
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- Journal of Materials Science: Materials in Electronics, Vol. 28, Issue 2
Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics
journal, April 2009
- Chen, Guo-hua; Xu, Hua-rui; Jiang, Min-hong
- Journal of Materials Science: Materials in Electronics, Vol. 21, Issue 2