DOE Data Explorer title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Materials Data on GaAs by Materials Project

Abstract

Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

Authors:
Publication Date:
Other Number(s):
mp-1245274
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; GaAs; As-Ga
OSTI Identifier:
1738501
DOI:
https://doi.org/10.17188/1738501

Citation Formats

The Materials Project. Materials Data on GaAs by Materials Project. United States: N. p., 2019. Web. doi:10.17188/1738501.
The Materials Project. Materials Data on GaAs by Materials Project. United States. doi:https://doi.org/10.17188/1738501
The Materials Project. 2019. "Materials Data on GaAs by Materials Project". United States. doi:https://doi.org/10.17188/1738501. https://www.osti.gov/servlets/purl/1738501. Pub date:Tue Jul 02 00:00:00 EDT 2019
@article{osti_1738501,
title = {Materials Data on GaAs by Materials Project},
author = {The Materials Project},
abstractNote = {Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations},
doi = {10.17188/1738501},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 02 00:00:00 EDT 2019},
month = {Tue Jul 02 00:00:00 EDT 2019}
}

Works referenced in this record:

Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films
journal, November 2009


Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy
journal, February 2005