Materials Data on NbSiGe by Materials Project

doi:10.17188/1729363

Title: Materials Data on NbSiGe by Materials Project

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Abstract

NbGeSi crystallizes in the trigonal P3_212 space group. The structure is three-dimensional. Nb2+ is bonded in a distorted pentagonal planar geometry to five equivalent Si4- atoms. There are a spread of Nb–Si bond distances ranging from 2.66–2.86 Å. Ge2+ is bonded in a 5-coordinate geometry to five equivalent Si4- atoms. There are a spread of Ge–Si bond distances ranging from 2.63–2.88 Å. Si4- is bonded in a 10-coordinate geometry to five equivalent Nb2+ and five equivalent Ge2+ atoms.

Authors:: The Materials Project

Publication Date:: 2020-05-04

Other Number(s):: mp-1220385

DOE Contract Number:: AC02-05CH11231; EDCBEE

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Collaborations:: MIT; UC Berkeley; Duke; U Louvain

Subject:: 36 MATERIALS SCIENCE

Keywords:: crystal structure; NbSiGe; Ge-Nb-Si

OSTI Identifier:: 1729363

DOI:: https://doi.org/10.17188/1729363

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                    The Materials Project. Materials Data on NbSiGe by Materials Project.  United States: N. p., 2020. 
        Web.  doi:10.17188/1729363.

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                    The Materials Project. Materials Data on NbSiGe by Materials Project.  United States.  doi:https://doi.org/10.17188/1729363

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                    The Materials Project. 2020.  
"Materials Data on NbSiGe by Materials Project".  United States.  doi:https://doi.org/10.17188/1729363.  https://www.osti.gov/servlets/purl/1729363. Pub date:Mon May 04 00:00:00 EDT 2020

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@article{osti_1729363,

  title        = {Materials Data on NbSiGe by Materials Project},

  author       = {The Materials Project},

  abstractNote = {NbGeSi crystallizes in the trigonal P3_212 space group. The structure is three-dimensional. Nb2+ is bonded in a distorted pentagonal planar geometry to five equivalent Si4- atoms. There are a spread of Nb–Si bond distances ranging from 2.66–2.86 Å. Ge2+ is bonded in a 5-coordinate geometry to five equivalent Si4- atoms. There are a spread of Ge–Si bond distances ranging from 2.63–2.88 Å. Si4- is bonded in a 10-coordinate geometry to five equivalent Nb2+ and five equivalent Ge2+ atoms.},

  doi          = {10.17188/1729363},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {5}

}

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DOI: https://doi.org/10.17188/1729363

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