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Title: Materials Data on Y3GaS6 by Materials Project

Abstract

Y3GaS6 crystallizes in the orthorhombic Cmc2_1 space group. The structure is three-dimensional. there are two inequivalent Y3+ sites. In the first Y3+ site, Y3+ is bonded to seven S2- atoms to form distorted YS7 pentagonal bipyramids that share corners with five YS7 pentagonal bipyramids, corners with three equivalent GaS4 tetrahedra, edges with five YS7 pentagonal bipyramids, an edgeedge with one GaS4 tetrahedra, and a faceface with one YS7 pentagonal bipyramid. There are a spread of Y–S bond distances ranging from 2.68–2.98 Å. In the second Y3+ site, Y3+ is bonded to seven S2- atoms to form distorted YS7 pentagonal bipyramids that share corners with two equivalent YS7 pentagonal bipyramids, a cornercorner with one GaS4 tetrahedra, edges with eight YS7 pentagonal bipyramids, and an edgeedge with one GaS4 tetrahedra. There are a spread of Y–S bond distances ranging from 2.74–3.01 Å. Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with seven YS7 pentagonal bipyramids and edges with three YS7 pentagonal bipyramids. There are a spread of Ga–S bond distances ranging from 2.29–2.34 Å. There are four inequivalent S2- sites. In the first S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to threemore » Y3+ and one Ga3+ atom. In the second S2- site, S2- is bonded to four Y3+ atoms to form SY4 tetrahedra that share corners with two equivalent SY4 tetrahedra, corners with two equivalent SY4Ga trigonal bipyramids, edges with three equivalent SY4 tetrahedra, and an edgeedge with one SY4Ga trigonal bipyramid. In the third S2- site, S2- is bonded in a 4-coordinate geometry to three Y3+ and one Ga3+ atom. In the fourth S2- site, S2- is bonded to four equivalent Y3+ and one Ga3+ atom to form distorted SY4Ga trigonal bipyramids that share corners with four equivalent SY4 tetrahedra, edges with two equivalent SY4 tetrahedra, and edges with two equivalent SY4Ga trigonal bipyramids.« less

Publication Date:
Other Number(s):
mp-1189598
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Y3GaS6; Ga-S-Y
OSTI Identifier:
1728924
DOI:
https://doi.org/10.17188/1728924

Citation Formats

The Materials Project. Materials Data on Y3GaS6 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1728924.
The Materials Project. Materials Data on Y3GaS6 by Materials Project. United States. doi:https://doi.org/10.17188/1728924
The Materials Project. 2020. "Materials Data on Y3GaS6 by Materials Project". United States. doi:https://doi.org/10.17188/1728924. https://www.osti.gov/servlets/purl/1728924. Pub date:Sat May 09 00:00:00 EDT 2020
@article{osti_1728924,
title = {Materials Data on Y3GaS6 by Materials Project},
author = {The Materials Project},
abstractNote = {Y3GaS6 crystallizes in the orthorhombic Cmc2_1 space group. The structure is three-dimensional. there are two inequivalent Y3+ sites. In the first Y3+ site, Y3+ is bonded to seven S2- atoms to form distorted YS7 pentagonal bipyramids that share corners with five YS7 pentagonal bipyramids, corners with three equivalent GaS4 tetrahedra, edges with five YS7 pentagonal bipyramids, an edgeedge with one GaS4 tetrahedra, and a faceface with one YS7 pentagonal bipyramid. There are a spread of Y–S bond distances ranging from 2.68–2.98 Å. In the second Y3+ site, Y3+ is bonded to seven S2- atoms to form distorted YS7 pentagonal bipyramids that share corners with two equivalent YS7 pentagonal bipyramids, a cornercorner with one GaS4 tetrahedra, edges with eight YS7 pentagonal bipyramids, and an edgeedge with one GaS4 tetrahedra. There are a spread of Y–S bond distances ranging from 2.74–3.01 Å. Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with seven YS7 pentagonal bipyramids and edges with three YS7 pentagonal bipyramids. There are a spread of Ga–S bond distances ranging from 2.29–2.34 Å. There are four inequivalent S2- sites. In the first S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Y3+ and one Ga3+ atom. In the second S2- site, S2- is bonded to four Y3+ atoms to form SY4 tetrahedra that share corners with two equivalent SY4 tetrahedra, corners with two equivalent SY4Ga trigonal bipyramids, edges with three equivalent SY4 tetrahedra, and an edgeedge with one SY4Ga trigonal bipyramid. In the third S2- site, S2- is bonded in a 4-coordinate geometry to three Y3+ and one Ga3+ atom. In the fourth S2- site, S2- is bonded to four equivalent Y3+ and one Ga3+ atom to form distorted SY4Ga trigonal bipyramids that share corners with four equivalent SY4 tetrahedra, edges with two equivalent SY4 tetrahedra, and edges with two equivalent SY4Ga trigonal bipyramids.},
doi = {10.17188/1728924},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}