Materials Data on SiTc by Materials Project
Abstract
TcSi is alpha-derived structured and crystallizes in the cubic P2_13 space group. The structure is three-dimensional. Tc4+ is bonded in a 7-coordinate geometry to seven equivalent Si4- atoms. There are a spread of Tc–Si bond distances ranging from 2.41–2.69 Å. Si4- is bonded in a 7-coordinate geometry to seven equivalent Tc4+ atoms.
- Publication Date:
- Other Number(s):
- mp-1079910
- DOE Contract Number:
- AC02-05CH11231;
- Research Org.:
- LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Collaborations:
- The Materials Project; MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE; crystal structure; Si-Tc; SiTc
- OSTI Identifier:
- 1718576
- DOI:
- https://doi.org/10.17188/1718576
Citation Formats
Materials Data on SiTc by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1718576.
Materials Data on SiTc by Materials Project. United States. doi:https://doi.org/10.17188/1718576
2020.
"Materials Data on SiTc by Materials Project". United States. doi:https://doi.org/10.17188/1718576. https://www.osti.gov/servlets/purl/1718576. Pub date:Sat May 02 20:00:00 EDT 2020
@article{osti_1718576,
title = {Materials Data on SiTc by Materials Project},
abstractNote = {TcSi is alpha-derived structured and crystallizes in the cubic P2_13 space group. The structure is three-dimensional. Tc4+ is bonded in a 7-coordinate geometry to seven equivalent Si4- atoms. There are a spread of Tc–Si bond distances ranging from 2.41–2.69 Å. Si4- is bonded in a 7-coordinate geometry to seven equivalent Tc4+ atoms.},
doi = {10.17188/1718576},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}
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