U.S. Department of EnergyOffice of Scientific and Technical Information
Materials Data on K2Si4SbO11 by Materials Project
Abstract
K2Si4SbO11 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. there are two inequivalent K sites. In the first K site, K is bonded in a 7-coordinate geometry to nine O atoms. There are a spread of K–O bond distances ranging from 2.60–3.39 Å. In the second K site, K is bonded in a 9-coordinate geometry to nine O atoms. There are a spread of K–O bond distances ranging from 2.73–3.39 Å. There are four inequivalent Si sites. In the first Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share a cornercorner with one SbO5 square pyramid and corners with three SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.61–1.65 Å. In the second Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share a cornercorner with one SbO5 square pyramid and corners with three SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.62–1.64 Å. In the third Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share a cornercorner with one SbO5 square pyramid and corners with three SiO4 tetrahedra. There are amore »
- Authors:
- Publication Date:
- Other Number(s):
- mp-1196593
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Collaborations:
- MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE
- Keywords:
- crystal structure; K2Si4SbO11; K-O-Sb-Si
- OSTI Identifier:
- 1711574
- DOI:
- https://doi.org/10.17188/1711574
Citation Formats
The Materials Project. Materials Data on K2Si4SbO11 by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1711574.
The Materials Project. Materials Data on K2Si4SbO11 by Materials Project. United States. doi:https://doi.org/10.17188/1711574
The Materials Project. 2020.
"Materials Data on K2Si4SbO11 by Materials Project". United States. doi:https://doi.org/10.17188/1711574. https://www.osti.gov/servlets/purl/1711574. Pub date:Wed Apr 29 00:00:00 EDT 2020
@article{osti_1711574,
title = {Materials Data on K2Si4SbO11 by Materials Project},
author = {The Materials Project},
abstractNote = {K2Si4SbO11 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. there are two inequivalent K sites. In the first K site, K is bonded in a 7-coordinate geometry to nine O atoms. There are a spread of K–O bond distances ranging from 2.60–3.39 Å. In the second K site, K is bonded in a 9-coordinate geometry to nine O atoms. There are a spread of K–O bond distances ranging from 2.73–3.39 Å. There are four inequivalent Si sites. In the first Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share a cornercorner with one SbO5 square pyramid and corners with three SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.61–1.65 Å. In the second Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share a cornercorner with one SbO5 square pyramid and corners with three SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.62–1.64 Å. In the third Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share a cornercorner with one SbO5 square pyramid and corners with three SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.62–1.65 Å. In the fourth Si site, Si is bonded to four O atoms to form SiO4 tetrahedra that share a cornercorner with one SbO5 square pyramid and corners with three SiO4 tetrahedra. There are a spread of Si–O bond distances ranging from 1.62–1.65 Å. Sb is bonded to five O atoms to form SbO5 square pyramids that share corners with four SiO4 tetrahedra. There are a spread of Sb–O bond distances ranging from 1.87–2.16 Å. There are eleven inequivalent O sites. In the first O site, O is bonded in a distorted bent 150 degrees geometry to one K and two Si atoms. In the second O site, O is bonded in a 1-coordinate geometry to two equivalent K, one Si, and one Sb atom. In the third O site, O is bonded in a 1-coordinate geometry to two K, one Si, and one Sb atom. In the fourth O site, O is bonded in a 1-coordinate geometry to three K and one Sb atom. In the fifth O site, O is bonded in a bent 150 degrees geometry to one K and two Si atoms. In the sixth O site, O is bonded in a 1-coordinate geometry to two equivalent K, one Si, and one Sb atom. In the seventh O site, O is bonded in a 2-coordinate geometry to two equivalent K and two Si atoms. In the eighth O site, O is bonded in a distorted bent 150 degrees geometry to one K and two Si atoms. In the ninth O site, O is bonded in a bent 150 degrees geometry to one K and two Si atoms. In the tenth O site, O is bonded in a 1-coordinate geometry to three K, one Si, and one Sb atom. In the eleventh O site, O is bonded in a bent 150 degrees geometry to two Si atoms.},
doi = {10.17188/1711574},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}