U.S. Department of EnergyOffice of Scientific and Technical Information
Materials Data on GaAgGeS4 by Materials Project
Abstract
AgGaGeS4 is Chalcostibite-derived structured and crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are three inequivalent Ag1+ sites. In the first Ag1+ site, Ag1+ is bonded in a 4-coordinate geometry to four S2- atoms. There are a spread of Ag–S bond distances ranging from 2.58–2.76 Å. In the second Ag1+ site, Ag1+ is bonded in a 4-coordinate geometry to four S2- atoms. There are a spread of Ag–S bond distances ranging from 2.57–2.83 Å. In the third Ag1+ site, Ag1+ is bonded in a 4-coordinate geometry to four S2- atoms. There are a spread of Ag–S bond distances ranging from 2.58–2.72 Å. There are three inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share a cornercorner with one GaS4 tetrahedra and corners with three GeS4 tetrahedra. There are a spread of Ga–S bond distances ranging from 2.27–2.34 Å. In the second Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share a cornercorner with one GaS4 tetrahedra and corners with three GeS4 tetrahedra. There are a spread of Ga–S bond distances ranging from 2.29–2.34 Å. In the third Ga3+more »
- Authors:
- Publication Date:
- Other Number(s):
- mp-1224946
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Collaborations:
- MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE
- Keywords:
- crystal structure; GaAgGeS4; Ag-Ga-Ge-S
- OSTI Identifier:
- 1706828
- DOI:
- https://doi.org/10.17188/1706828
Citation Formats
The Materials Project. Materials Data on GaAgGeS4 by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1706828.
The Materials Project. Materials Data on GaAgGeS4 by Materials Project. United States. doi:https://doi.org/10.17188/1706828
The Materials Project. 2020.
"Materials Data on GaAgGeS4 by Materials Project". United States. doi:https://doi.org/10.17188/1706828. https://www.osti.gov/servlets/purl/1706828. Pub date:Fri May 01 00:00:00 EDT 2020
@article{osti_1706828,
title = {Materials Data on GaAgGeS4 by Materials Project},
author = {The Materials Project},
abstractNote = {AgGaGeS4 is Chalcostibite-derived structured and crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are three inequivalent Ag1+ sites. In the first Ag1+ site, Ag1+ is bonded in a 4-coordinate geometry to four S2- atoms. There are a spread of Ag–S bond distances ranging from 2.58–2.76 Å. In the second Ag1+ site, Ag1+ is bonded in a 4-coordinate geometry to four S2- atoms. There are a spread of Ag–S bond distances ranging from 2.57–2.83 Å. In the third Ag1+ site, Ag1+ is bonded in a 4-coordinate geometry to four S2- atoms. There are a spread of Ag–S bond distances ranging from 2.58–2.72 Å. There are three inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share a cornercorner with one GaS4 tetrahedra and corners with three GeS4 tetrahedra. There are a spread of Ga–S bond distances ranging from 2.27–2.34 Å. In the second Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share a cornercorner with one GaS4 tetrahedra and corners with three GeS4 tetrahedra. There are a spread of Ga–S bond distances ranging from 2.29–2.34 Å. In the third Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with two GaS4 tetrahedra and corners with two equivalent GeS4 tetrahedra. There are a spread of Ga–S bond distances ranging from 2.27–2.32 Å. There are three inequivalent Ge4+ sites. In the first Ge4+ site, Ge4+ is bonded to four S2- atoms to form GeS4 tetrahedra that share corners with two GaS4 tetrahedra and corners with two equivalent GeS4 tetrahedra. There are a spread of Ge–S bond distances ranging from 2.23–2.28 Å. In the second Ge4+ site, Ge4+ is bonded to four S2- atoms to form GeS4 tetrahedra that share corners with four GaS4 tetrahedra. There are a spread of Ge–S bond distances ranging from 2.23–2.28 Å. In the third Ge4+ site, Ge4+ is bonded to four S2- atoms to form GeS4 tetrahedra that share corners with two GaS4 tetrahedra and corners with two equivalent GeS4 tetrahedra. There are a spread of Ge–S bond distances ranging from 2.20–2.28 Å. There are twelve inequivalent S2- sites. In the first S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to one Ag1+ and two Ge4+ atoms. In the second S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to one Ag1+, one Ga3+, and one Ge4+ atom. In the third S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to one Ag1+, one Ga3+, and one Ge4+ atom. In the fourth S2- site, S2- is bonded in a water-like geometry to two Ge4+ atoms. In the fifth S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to one Ag1+, one Ga3+, and one Ge4+ atom. In the sixth S2- site, S2- is bonded in a 3-coordinate geometry to one Ag1+, one Ga3+, and one Ge4+ atom. In the seventh S2- site, S2- is bonded in a 3-coordinate geometry to one Ag1+ and two Ga3+ atoms. In the eighth S2- site, S2- is bonded in a water-like geometry to one Ga3+ and one Ge4+ atom. In the ninth S2- site, S2- is bonded in a trigonal non-coplanar geometry to one Ag1+, one Ga3+, and one Ge4+ atom. In the tenth S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to one Ag1+, one Ga3+, and one Ge4+ atom. In the eleventh S2- site, S2- is bonded to two Ag1+ and two Ga3+ atoms to form corner-sharing SGa2Ag2 tetrahedra. In the twelfth S2- site, S2- is bonded to two Ag1+, one Ga3+, and one Ge4+ atom to form corner-sharing SGaAg2Ge tetrahedra.},
doi = {10.17188/1706828},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}
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