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Title: Materials Data on SiGe by Materials Project

Abstract

SiGe is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Ge4+ is bonded to four equivalent Si4- atoms to form corner-sharing GeSi4 tetrahedra. All Ge–Si bond lengths are 2.42 Å. Si4- is bonded to four equivalent Ge4+ atoms to form corner-sharing SiGe4 tetrahedra.

Authors:
Publication Date:
Other Number(s):
mp-1219182
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; SiGe; Ge-Si
OSTI Identifier:
1705675
DOI:
https://doi.org/10.17188/1705675

Citation Formats

The Materials Project. Materials Data on SiGe by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1705675.
The Materials Project. Materials Data on SiGe by Materials Project. United States. doi:https://doi.org/10.17188/1705675
The Materials Project. 2020. "Materials Data on SiGe by Materials Project". United States. doi:https://doi.org/10.17188/1705675. https://www.osti.gov/servlets/purl/1705675. Pub date:Sun May 03 00:00:00 EDT 2020
@article{osti_1705675,
title = {Materials Data on SiGe by Materials Project},
author = {The Materials Project},
abstractNote = {SiGe is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Ge4+ is bonded to four equivalent Si4- atoms to form corner-sharing GeSi4 tetrahedra. All Ge–Si bond lengths are 2.42 Å. Si4- is bonded to four equivalent Ge4+ atoms to form corner-sharing SiGe4 tetrahedra.},
doi = {10.17188/1705675},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}

Works referenced in this record:

UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix
journal, June 2007


In situ oxidation of ultrathin layers of Ge on Si(001): evidence for bonding partner exchange
journal, January 1994